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  1. Article

    Open Access

    Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

    In this paper, the floating body effect (FBE) in indium-gallium-zinc-oxide (IGZO) thin-film transistor (TFT) and the mechanism of device failure caused by that are reported for the first time. If the toggle AC...

    **gyu Park, Seungwon Go, Woojun Chae, Chang Il Ryoo, Changwook Kim… in Scientific Reports (2024)

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