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  1. No Access

    Article

    High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation

    Yutong Fan, ** Liu, Ren Huang, Yu Wen, Weihang Zhang… in Science China Information Sciences (2023)

  2. No Access

    Article

    2.29-kV GaN-based double-channel Schottky barrier diodes on Si substrates with high VON uniformity

    Ren Huang, Weihang Zhang, **cheng Zhang, Chunxu Su… in Science China Information Sciences (2023)

  3. No Access

    Article

    Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs

    In this study, we investigate heavy ion irradiation effects on commercial 650 V p-GaN normally-off HEMTs. Ge and Cl ions are used to irradiate the GaN devices in the experiments. Ge and Cl ion beam irradiation...

    Yinhe Wu, **cheng Zhang, Shenglei Zhao, Zhaoxi Wu… in Science China Information Sciences (2022)

  4. No Access

    Article

    Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

    In this paper, Schottky-drain reverse-blocking AlN/AlGaN HEMTs with drain field plate (FP) have been investigated by Silvaco-ATLAS tools. For HEMTs without FP, with the increase of Al mole fraction in AlGaN ch...

    Dujun Zhao, Zhaoxi Wu, Chao Duan, Bo Mei… in Science China Information Sciences (2021)