![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Interfacial Structure of the Discontinuously Precipitated Lamellae in Fe-31.3Mn-8.7AI-2.0C Alloy
The discontinuous grain boundary (GB) precipitation behavior of rapidly solidified Fe-31.3wt. % Mn-8.7wt.%A1-2.0wt.%C on aging at 923K has been investigated by TEM and X-ray diffraction. The parent matrix was ...
-
Article
Rapid Thermal Annealing of GaAs Films on (001) Si Substrate Grown by Solid Phase Epitaxy Technique
GaAs layers grown by solid phase epitaxy on (001) Si substrate were subjected to post-growth rapid thermal anneal (RTA) at 700, 800, and 900°C for 10s in a N2 atmosphere. Rutherford backscattering/channeling show...
-
Article
Preparation and Microstructural Characterization of Ferroelectric Thin Film PbTiO3 on Si, MgO, and Sapphire Deposited by DC Reactive Multitarget Co-Sputtering.
PbTiO3 thin films on Si (100) plane were prepared by the DC reactive multitarget cosputtering technique. The film composition and structure were examined as a function of deposition parameters. The crystal struct...
-
Article
Phase and lattice parameter relationships in rapidly solidified and heat-treated (Mn0.53Al0.47)100−xCx pseudo-binary alloys
The phase constitution and the lattice parameter relationships in the rapidly solidified and heat-treated (Mn0.53Al0.47)100−xCx pseudo-binary alloys (x = 0–6) have been investigated by means of x-ray diffraction ...
-
Article
Initial Stage of Solid Phase Epitaxial Growth of GaAs Films on Vicinal Si (001) Substrate
The initial stage of solid phase epitaxial (SPE) growth of GaAs films on the vicinal Si (001) substrate was investigated by high resolution transmission electron microscopy (HRTEM). Cross-sectional [110] and [...