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    Chapter

    Resonant Magnetotunneling in Type II Heterostructures

    We review the experimental effects of a magnetic field on the current-voltage characteristics of type II resonant-tunneling structures, mainly GaSb-AlSb-InAs-AlSb-GaSb. Their behavior under field, found to be ...

    E. E. Mendez, H. Ohno, L. Esaki, W. I. Wang in Resonant Tunneling in Semiconductors (1991)

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    Chapter

    Tunneling in Polytype InAs/AlSb/GaSb Heterostructures

    Polytype heterostructures of GaSb/AlSb/InAs show interband tunneling due to the 0.1 eV overlap of the InAs conduction band and the GaSb valence band. This broken-gap configuration results in a novel mechanism ...

    K. F. Longenbach, L. F. Luo, W. I. Wang in Resonant Tunneling in Semiconductors (1991)

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    Chapter

    Excitons in Low Dimensional Semiconductors

    We present high resolution pseudo-absorption spectra of GaAs/GaAIAs quantum wells. Information on the energy spectrum of excitons is obtained from low temperature photoluminescence excitation spectroscopy. The...

    L. Viña, E. E. Mendez, W. I. Wang in Science and Engineering of One- and Zero-D… (1990)

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    Chapter and Conference Paper

    The Two-Dimensional Density of States at Fractional Filling Factors

    Magnetocapacitance measurements have yielded the density of states of a two-dimensional electron gas from the weak-field limit to the extreme quantum limit. Quantitative information about the density of states...

    T. P. Smith III, W. I. Wang, P. J. Stiles in High Magnetic Fields in Semiconductor Physics (1987)

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    Chapter and Conference Paper

    Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures

    The quantum Hall effect in two-dimensional electron systems has been reported in a number of heterostructures,1–4 in which the Hall resistance, ρxy =h/νe2, shows plateaus at integral values of ν and the magneto-r...

    L. L. Chang, E. E. Mendez, W. I. Wang in Proceedings of the 17th International Conf… (1985)