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    Article

    Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

    GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm-1 to 10 20 cm-1. The incorporation of carbon leads to a reduction of the background electron co...

    U. Birkle, M. Fehrer, V. Kirchner, S. Einfeldt, D. Hommel… in MRS Online Proceedings Library (2011)

  2. Article

    Studies on Carbon as Alternative P-Type Dopant for Gallium Nitride

    GaN layers were grown by molecular beam epitaxy and doped with carbon of nominal concentrations ranging from 1016 cm−3 to 1020 cm−3. The incorporation of carbon leads to a reduction of the background electron con...

    U. Birkle, M. Fehrer, V. Kirchner… in MRS Internet Journal of Nitride Semiconduc… (1999)

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    Article

    MBE Growth of GaN on NdGaO3 (101)

    We report on the growth of GaN on NdGaO3 (101) by plasma assisted molecular beam epitaxy (MBE). NdGaO3 (101) is an interesting alternative substrate compared to A12O3 due to its smaller lattice mismatch of +1.2 %...

    C. Fechtmann, V. Kirchner, S. Einfeldt, H. Heinke… in MRS Online Proceedings Library (1997)