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  1. No Access

    Article

    Wet Chemical Methods of HgCdTe Surface Treatment

    Chemical pretreatment and surface cleaning is a key procedure of semiconductor technologies. Development of methods for the preparation of mercury cadmium telluride (HgCdTe) surfaces is of interest because thi...

    E. R. Zakirov, V. G. Kesler, G. Y. Sidorov… in Journal of Structural Chemistry (2023)

  2. No Access

    Article

    DIELECTRIC LAYERS BCxNy: SYNTHESIS BY THE DECOMPOSITION OF VAPORS OF ORGANOBORON COMPOUNDS, COMPOSITION AND CHEMICAL STRUCTURE

    Composition, chemical structure, and dielectric characteristics of boron carbonitride films BCxNy prepared by chemical vapor deposition upon thermal and plasma activation of the initial gas mixture are studied. T...

    V. S. Sulyaeva, V. G. Kesler, M. L. Kosinova in Journal of Structural Chemistry (2021)

  3. No Access

    Article

    XPS Study of the Process of HgCdTe Oxidation in a Glow Discharge Oxygen Plasma

    Initial stages of HgCdTe oxidation in a glow discharge plasma in O2 atmosphere are first studied using the XPS method. The chemical composition of the growing native oxide layer is investigated and the oxidation ...

    E. R. Zakirov, V. G. Kesler in Journal of Structural Chemistry (2019)

  4. No Access

    Article

    A study of the chemical bond types in films deposited from bis(trimethylsilyl)-ethylamine by PECVD

    Silicon carbonitride films are synthesized by plasma enhanced chemical vapor deposition from bis(trimethylsilyl)ethylamine and helium or ammonium mixtures. The structure of chemical bonds in the films is studied ...

    E. N. Ermakova, V. G. Kesler, Yu. M. Rumyantsev… in Journal of Structural Chemistry (2014)

  5. No Access

    Article

    MIS photodiode with an InAs-based tunnel-transparent oxide layer

    Results of studying the possibilities of passivating InAs surfaces by ultrathin oxide films (∼3 nm) in a glow-discharge plasma and producing tunnel MIS photodiodes on this basis are presented together with res...

    V. G. Kesler, A. A. Guzev, A. P. Kovchavtsev… in Optoelectronics, Instrumentation and Data … (2014)

  6. No Access

    Article

    Synthesis of silicon carbonitride dielectric films with improved optical and mechanical properties from tetramethyldisilazane

    Films of silicon carbonitride have been obtained by the plasma chemical decomposition of a gaseous mixture of helium and a volatile organic silicon compound 1,1,3,3-tetramethyldisilazane (TMDS) in the temperat...

    N. I. Fainer, A. N. Golubenko, Yu. M. Rumyantsev… in Glass Physics and Chemistry (2013)

  7. No Access

    Article

    X-ray photoelectron and auger spectroscopic study of the chemical composition of BC x N y films

    X-ray photoelectron and Auger spectroscopy are used to investigate the chemical composition of BC x N y films synthesized by PECVD from differe...

    V. G. Kesler, M. L. Kosinova, Yu. M. Rumyantsev… in Journal of Structural Chemistry (2012)

  8. No Access

    Article

    Tris(diethylamino)silane—A new precursor compound for obtaining layers of silicon carbonitride

    Silicon carbonitride layers have been obtained by chemical deposition from the gas phase with thermal (LPCVD) and plasma (PECVD) activation of the gas mixture of helium with the new volatile siliconorganic com...

    N. I. Fainer, A. N. Golubenko, Yu. M. Rumyantsev… in Glass Physics and Chemistry (2012)

  9. No Access

    Article

    In situ XPS study of InAs oxidation in glow-discharge plasma

    This is the first in situ XPS study of the InAs oxidation kinetics in glow-discharge plasma in the atmosphere of O2 and CO2 gases and in a mixture of O2 and NF3 gases. Chemical composition of the oxide films prod...

    V. G. Kesler in Journal of Structural Chemistry (2011)

  10. No Access

    Article

    Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ions

    Thermally grown SiO2 layers have been irradiated with 700-MeV Bi ions with doses of (3–10) × 1012 cm−2. It is found that, even after a dose of 3 × 1012 cm−2, a photoluminescence band in the region of 600 nm appea...

    G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, V. G. Kesler… in Semiconductors (2011)

  11. No Access

    Article

    Preparation of nanocrystalline titanium carbonitride coatings using Ti(N(Et)2)4

    Titanium carbonitride films with a thickness of 80–150 nm have been synthesized by low pressure chemical vapor deposition from a gas mixture of tetrakis(diethylamino)titanium and ammonia at temperatures of 773...

    N. I. Fainer, A. N. Golubenko, Yu. M. Rumyantsev… in Glass Physics and Chemistry (2011)

  12. No Access

    Article

    The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions

    The SiO x layers different in composition (0 < x < 2) are irradiated with Xe ions with the energy 167 MeV and the dose 1014 cm−2 to stimulate the formation of light-emitting Si ...

    G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. G. Kesler, V. A. Skuratov… in Semiconductors (2011)

  13. No Access

    Article

    Plasma-chemical synthesis of silicon carbonitride films from trimethyl(diethylamino)silane

    Silicon carbonitride films of different compositions have been synthesized by plasma-enhanced chemical vapor deposition with the use of trimethyl(diethylamino)silane as the initial compound. The conditions use...

    M. L. Kosinova, Yu. M. Rumyantsev, L. I. Chernyavskii… in Glass Physics and Chemistry (2010)

  14. No Access

    Article

    Properties of BC x N y films grown by plasma-enhanced chemical vapor deposition from N-trimethylborazine-nitrogen mixtures

    Boron carbonitride films of various compositions have been grown by plasma-enhanced chemical vapor deposition using N-trimethylborazine as a single-source precursor and nitrogen as a plasma gas and an additional ...

    V. S. Sulyaeva, M. L. Kosinova, Yu. M. Rumyantsev, A. N. Golubenko… in Inorganic Materials (2010)

  15. No Access

    Article

    Core level spectroscopy and RHEED analysis of KGd0.95 Nd0.05(WO4)2 surface

    A study of the surface structure and electronic properties of (010) KGd0.95Nd0.05(WO4)2 (Nd:KGW) using RHEED analysis and XPS is presented. It is shown that Nd do** has a negligible effect on the core level...

    V. V. Atuchin, V. G. Kesler… in The European Physical Journal B - Condense… (2006)

  16. No Access

    Article

    Synthesis and Physicochemical Properties of Nanocrystalline Silicon Carbonitride Films Deposited by Microwave Plasma from Organoelement Compounds

    Nanocrystalline films of a ternary compound, namely, silicon carbonitride SiCxNy, are prepared by plasma-enhanced chemical vapor deposition at temperatures of 473–1173 K with the use of a complex gaseous mixture ...

    N. I. Fainer, M. L. Kosinova, Yu. M. Rumyantsev… in Glass Physics and Chemistry (2005)

  17. No Access

    Article

    Effect of nickel on the magnetic state of dysprosium in Dy1−x Nix-Ni bilayer films

    This paper reports on the results of investigations into the temperature and spectral dependences of the magnetic circular dichroism in Dy1−x Nix-Ni bilayer films prepared through thermal sputter deposition of co...

    I. S. Édelman, V. V. Markov, S. G. Ovchinnikov… in Physics of the Solid State (2003)

  18. No Access

    Article

    Silicon nanocrystal formation upon annealing of SiO2 layers implanted with Si ions

    The formation of silicon nanocrystals in SiO2 layers implanted with Si ions was investigated by Raman scattering, X-ray photoelectron spectroscopy, and photoluminescence. The excess Si concentration was varied be...

    G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, V. G. Kesler… in Semiconductors (2002)

  19. No Access

    Article

    Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy

    This paper reports on a study of the depth profile of components in GeSi heterostructures grown on low-temperature silicon (LTSi: T gr ∼ 350–400° C) and porous silicon by molecular-beam epitaxy. An excess Ge conc...

    V. G. Kesler, L. M. Logvinskii, V. I. Mashanov… in Physics of the Solid State (2002)

  20. No Access

    Chapter

    Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs

    Heterostructures AIIBVI /AIIIBVare valuable materials for semiconductor electronics that are employed especially in the fabrication of various photoactive devices.

    M. V. Yakushev, Yu. G. Sidorov, L. V. Sokolov, V. G. Kesler… in Growth of Crystals (2002)

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