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    Article

    Determination of layer-thickness fluctuations in Mo/Si multilayers by cross-sectional HR-TEM and X-ray diffraction

    We present a method of deriving single layer thickness fluctuations of Mo/Si EUV multilayers from cross-sectional high-resolution transmission electron microscopy micrographs. The obtained thickness values for...

    A. Aschentrup, W. Hachmann, T. Westerwalbesloh, Y.C. Lim in Applied Physics A (2003)

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    Microcharacterization of the surface oxidation of Py/Cu multilayers by scanning X-ray absorption spectromicroscopy

    The local surface oxidation of the permalloy surface layer in Py/Cu GMR multilayers on a micron lateral scale has been analyzed by means of a microspot-X-ray absorption spectromicroscope utilizing synchrotron ...

    U. Kleineberg, G. Haindl, A. Hütten, G. Reiss, E.M. Gullikson in Applied Physics A (2001)

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    Fabrication and characterization of EUV multilayer mirrors optimized for small spectral reflection bandwidth

    Our aim was to produce EUV multilayer mirrors with a small spectral bandwidth ΔE≤3 eV at 70 eV peak energy using UHV electron beam evaporation by varying the thickness ratio (Γ= ...

    Y.C. Lim, T. Westerwalbesloh, A. Aschentrup, O. Wehmeyer, G. Haindl in Applied Physics A (2001)

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    Article

    Metal / Silicon Multilayers Produced by Low-Temperature MOCVD

    W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 200°C, which is necessa...

    F. Hamelmann, G. Haindl, A. Klipp, E. Majkova in MRS Online Proceedings Library (1998)

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    Article

    STM writing of artificial nanostructures in ultrathin PMMA and SAM resists and subsequent pattern transfer in a Mo/Si multilayer by reactive ion etching

    J. Hartwich, L. Dreeskornfeld, V. Heisig, S. Rahn, O. Wehmeyer in Applied Physics A (1998)

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    Article

    Thermal stability of Mo/Si multilayer soft-X-ray mirrors fabricated by electron-beam evaporation

    Mo/Si multilayers are fabricated by electron-beam evaporation in UHV at different temperatures (30° C, 150° C, 200° C) during deposition. After completion their thermal stability is tested by baking them at te...

    H. -J. Stock, U. Kleineberg, B. Heidemann, K. Hilgers, A. Kloidt in Applied Physics A (1994)