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  1. No Access

    Article

    Impact of low dose gamma irradiation on electronic carrier transport in AlGaN/GaN High Electron Mobility Transistors

    AlGaN/GaN High Electron Mobility Transistors were exposed to 60Co gamma-irradiation to doses up to 300Gy. The impact of Compton- electron injection (due to gamma-irradiation) is studied through monitoring of mino...

    Anupama Yadav, Elena Flitsiyan, Leonid Chernyak, Fan Ren… in MRS Online Proceedings Library (2015)

  2. No Access

    Book

    Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

    Osamu Ueda, Stephen J. Pearton (2013)

  3. No Access

    Chapter

    GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors

    The two main GaAs-based electronic device technologies are high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs). Both technologies are commercialized for use in low-noise am...

    F. Ren, E. A. Douglas, Stephen J. Pearton in Materials and Reliability Handbook for Sem… (2013)

  4. No Access

    Chapter

    ZnO Nanowires for Gas and Bio-Chemical Sensing

    There has been significant recent interest in the use of surface-functionalized thin film and nanowire ZnO for sensing of gases, heavy metals, UV photons and biological molecules. For the detection of gases su...

    Stephen J. Pearton, David P. Norton, Fan Ren in Metal Oxide Nanomaterials for Chemical Sen… (2013)

  5. No Access

    Chapter

    Reliability Issues in AlGaN/GaN High Electron Mobility Transistors

    As AlGaN/GaN high electron mobility transistors gain commercial acceptance for use in high-power and high-frequency applications, it is becoming ever important to understand the degradation mechanisms that dri...

    E. A. Douglas, L. Liu, C. F. Lo, B. P. Gila… in Materials and Reliability Handbook for Sem… (2013)

  6. No Access

    Chapter

    Novel Dielectrics for GaN Device Passivation and Improved Reliability

    Proper surface cleaning processes and the type of passivation film (SiNX, Sc2O3, MgO) used to reduce the current collapse phenomena in the devices are very critical to reduce the inter-device isolation leakage cu...

    F. Ren, Stephen J. Pearton, B. P. Gila… in Materials and Reliability Handbook for Sem… (2013)

  7. No Access

    Article

    Epitaxial Growth of Dilute Magnetic Semiconductors: GaMnN and GaMnP

    Epitaxial growth of the dilute magnetic semiconductors GaMnP and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP films grown with < 4.5% Mn show the preferential formation of th...

    Mark E. Overberg, Cammy R. Abernathy, Stephen J. Pearton… in MRS Online Proceedings Library (2011)

  8. No Access

    Article

    Optimization of Samarium Oxide Deposition on Gallium Arsenide

    Samarium oxide (Sm2O3) and samarium gallium oxide (SmxGa1-x)2O3 have been proposed as candidate dielectric materials for the development of gallium arsenide (GaAs) Metal Oxide Semiconductor Field Effect Transisto...

    Anthony D. Stewart, Andrew G. Scheuermann, Andy P. Gerger… in MRS Online Proceedings Library (2009)

  9. No Access

    Article

    Development of Thin Film and Nanorod ZnO-Based LEDs and Sensors

    The development of new etching and contact metallurgies for the ZnO/ZnMgO/ZnCdO materials system and various approaches for realizing ZnO LEDs are reviewed. ZnO nanorod MOSFETs and pH sensors have been demonst...

    Stephen J. Pearton, L. C. Tien, H. S. Kim, D. P. Norton… in MRS Online Proceedings Library (2007)

  10. No Access

    Article

    Defects in Electron and Neutron Irradiated n-GaN: Disordered Regions Versus Point Defects

    Effects of 10 MeV electron and fast reactor neutron irradiations on carrier removal rate and deep traps spectra were compared for undoped n-GaN samples. It is shown that for electron irradiation the carrier re...

    Alexander Y. Polyakov, Nikolai B. Smirnov… in MRS Online Proceedings Library (2007)

  11. No Access

    Article

    Foreword

    Michael A. Capano, Stephen J. Pearton in Journal of Electronic Materials (2003)

  12. No Access

    Article

    Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

    Epitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hystereti...

    Gerald T. Thaler, Rachel M. Frazier, Brent P. Gila… in MRS Online Proceedings Library (2002)

  13. No Access

    Article

    A unified global self-consistent model of a capacitively and inductively coupled plasma etching system

    Based on the concept of independent control of ion flux and ion-bombardment energy, a global selfconsistent model was proposed for etching in a high-density plasma reactor. This model takes account of the effe...

    Yoon-Bong Hahn, Stephen J. Pearton in Korean Journal of Chemical Engineering (2000)

  14. No Access

    Article

    Introduction of Ions into Wide Band Gap Semiconductors

    With great attention now being given to the wide band gap materials for electronic and optoelectronic device applications, there is interest in using ion implantation to introduce dopants into selected regions...

    H. Paul Maruska, Mike Lioubtchenko, Thomas G. Tetreault… in MRS Online Proceedings Library (1997)

  15. No Access

    Article

    GaN and Related Materials for Device Applications

    Stephen J. Pearton, Chih** Kuo in MRS Bulletin (1997)