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  1. No Access

    Article

    Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma

    Recently, carbon-doped Ge2Sb2Te5 (CGST) phase change material has been widely researched for being highly promising material for future phase change memory application. In this paper, the reactive-ion etching ...

    Lanlan Shen, Sannian Song, Zhitang Song, Le Li, Tianqi Guo, Yan Cheng… in Applied Physics A (2016)

  2. No Access

    Article

    Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications

    The effects of Cr do** on the structural and electrical properties of Cr x (Sb4Te)1−x materials have been investigated in order to solve the contradic...

    Le Li, Sannian Song, Zhonghua Zhang, Zhitang Song, Yan Cheng… in Applied Physics A (2015)

  3. No Access

    Article

    A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage

    In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabric...

    Yingchun Fu, **aofeng Wang, Jiayong Zhang, **aodong Wang, Chun Chang… in Applied Physics A (2013)

  4. No Access

    Article

    The Role of Si and Sb in the Si-Sb-Te Phase-change Material

    Sb-rich Si-Sb-Te phase change materials with different Si contents were proposed and fabricated, and the role of Si and Sb in the Si-Sb-Te alloys was discussed. The resistance-temperature and retention propert...

    Liangcai Wu, **lin Zhou, Zhitang Song, Henan Ni, Feng Rao… in MRS Online Proceedings Library (2011)

  5. No Access

    Article

    Sb2Te3–HfO2 composite films for low-power phase change memory application

    The effect of HfO2 on phase change characteristics of Sb2Te3 films for phase change memory (PCM) applications was investigated by in situ temperature dependence of electrical resistance measurement, X-ray diffrac...

    Yegang Lu, Sannian Song, Zhitang Song, Kun Ren, Bo Liu, Songlin Feng in Applied Physics A (2011)

  6. No Access

    Article

    Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation

    In this study, novel Si2Sb2Te6 phase change material is investigated in detail for the phase change memory application using transmission electron microscopy and X-ray photoelectron spectroscopy. The phenomenon t...

    **lin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Kun Ren… in MRS Online Proceedings Library (2011)

  7. No Access

    Article

    Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application

    Sb-rich Si2Sb2+x Te6 (x=0, 1.4, 10) thin films are proposed to present the feasibility for electronic phase change memory application. The crystallization behavior is improved by adding Sb...

    **lin Zhou, Liangcai Wu, Zhitang Song, Feng Rao, Bo Liu, Dongning Yao… in Applied Physics A (2011)

  8. No Access

    Article

    Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

    The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separa...

    Sannian Song, Zhitang Song, Bo Liu, Liangcai Wu, Songlin Feng in Applied Physics A (2010)

  9. No Access

    Article

    Characterization of the properties for phase-change material GeSb

    Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85 composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applicat...

    Yifeng Gu, Ting Zhang, Zhitang Song, Yanbo Liu, Bo Liu, Songlin Feng in Applied Physics A (2010)

  10. No Access

    Article

    Investigation of electron beam induced phase change in Si2Sb2Te5 material

    The Si2Sb2Te5 phase change material for applications of chalcogenide random access memory was investigated. Electron irradiation induced crystallization in a nano-sized area was studied by means of in situ transm...

    Ting Zhang, Zhitang Song, Mingda Sun, Bo Liu, Songlin Feng, Bomy Chen in Applied Physics A (2008)