Low-carbon City and New-type Urbanization
Proceedings of Chinese Low-carbon City Development International Conference
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Article
Open AccessDirect atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge2Sb2Te5
GeTe-Sb2Te3 pseudobinary system, especially Ge2Sb2Te5 alloy, is the most desirable material to be commercialized in phase change random access memory. Directly resolving the local atomic arrangement of Ge2Sb2Te5 ...
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Article
Open AccessForeign object debris material recognition based on convolutional neural networks
The material attributes of foreign object debris (FOD) are the most crucial factors to understand the level of damage sustained by an aircraft. However, the prevalent FOD detection systems lack an effective me...
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Chapter and Conference Paper
(GaSb)0.5–Ge1.6Te Alloys for High-Temperature Phase Change Memory Applications
In this paper, phase change characteristics of (GaSb)0.5–Ge1.6Te alloy were investigated for long data retention phase change memory application. (GaSb)0.5–Ge1.6Te film has high crystallization temperature (357 °...
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Article
Open AccessSurface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film
Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge2Sb2Te5 (GST) thin film is es...
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Article
Properties of Ti–Sb–Te doped with SbSe alloy for application in nonvolatile phase change memory
Sb2Se3 alloy is used as a dopant for Ti–Sb–Te phase change material aiming to improve the thermal stability of Ti–Sb–Te based phase change memory cell. In this paper, the thermal and electrical properties of Sb2S...
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Article
Direct observation of metastable face-centered cubic Sb2Te3 crystal
Although phase change memory technology has developed drastically in the past two decades, the cognition of the key switching materials still ignores an important member, the face-centered cubic Sb2Te3. Apart fro...
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Article
Surface etching mechanism of carbon-doped Ge2Sb2Te5 phase change material in fluorocarbon plasma
Recently, carbon-doped Ge2Sb2Te5 (CGST) phase change material has been widely researched for being highly promising material for future phase change memory application. In this paper, the reactive-ion etching ...
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Article
Open AccessDirect observation of titanium-centered octahedra in titanium–antimony–tellurium phase-change material
Phase-change memory based on Ti0.4Sb2Te3 material has one order of magnitude faster Set speed and as low as one-fifth of the Reset energy compared with the conventional Ge2Sb2Te5 based device. However, the phase-...
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Article
Investigation of Cr0.06(Sb4Te)0.94 alloy for high-speed and high-data-retention phase change random access memory applications
The effects of Cr do** on the structural and electrical properties of Cr x (Sb4Te)1−x materials have been investigated in order to solve the contradic...
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Article
CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance
Phase change memory (PCM) is one of the most promising candidates for the next-generation non-volatile memory, of which phase change material as the storage media is the key factor. In this paper, we proposed ...
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Article
Open AccessPhase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Phase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth tech...
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Book and Conference Proceedings
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Article
Open AccessOne order of magnitude faster phase change at reduced power in Ti-Sb-Te
To date, slow Set operation speed and high Reset operation power remain to be important limitations for substituting dynamic random access memory by phase change memory. Here, we demonstrate phase change memor...
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Article
A lithography-independent and fully confined fabrication process of phase-change materials in metal electrode nanogap with 16-μA threshold current and 80-mV SET voltage
In this paper,we fabricate a lateral phase change memory device composed of a Ge2Sb2Te5 nanowire (GST NW) fully confined in a tungsten electrode nanogap. A SiNx spacer is used not only as etch mask for the fabric...
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Article
The Role of Si and Sb in the Si-Sb-Te Phase-change Material
Sb-rich Si-Sb-Te phase change materials with different Si contents were proposed and fabricated, and the role of Si and Sb in the Si-Sb-Te alloys was discussed. The resistance-temperature and retention propert...
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Article
Sb2Te3–HfO2 composite films for low-power phase change memory application
The effect of HfO2 on phase change characteristics of Sb2Te3 films for phase change memory (PCM) applications was investigated by in situ temperature dependence of electrical resistance measurement, X-ray diffrac...
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Article
Investigation on Phase Change Behaviors of Si-Sb-Te Alloy: The Effect of Tellurium Segregation
In this study, novel Si2Sb2Te6 phase change material is investigated in detail for the phase change memory application using transmission electron microscopy and X-ray photoelectron spectroscopy. The phenomenon t...
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Article
Investigation of Sb-rich Si2Sb2+x Te6 material for phase change random access memory application
Sb-rich Si2Sb2+x Te6 (x=0, 1.4, 10) thin films are proposed to present the feasibility for electronic phase change memory application. The crystallization behavior is improved by adding Sb...
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Article
Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films
The phase-change characteristics of Ge2Sb2Te5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO2 into GST film using cosputtering at room temperature. Phase separa...
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Article
Characterization of the properties for phase-change material GeSb
Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85 composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applicat...
