Skip to main content

6 Result(s)

within Shiwei Song Remove this filter Characterization and Evaluation of Materials Remove this filter

and

  1. No Access

    Article

    Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

    Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H–SiC by metal organic chemical vapor deposition using an in situ porous SiNx interlayer. The SiNx was formed in ...

    Shiwei Song, Yang Liu, Hongwei Liang… in Journal of Materials Science: Materials in… (2013)

  2. No Access

    Article

    Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

    GaN epilayers with porous SiNx interlayer and changed growth modes were grown by metal–organic chemical vapor deposition on c-plane sapphire substrates. Comparing with GaN epilayer grown by ordinary method, the c...

    Dechao Yang, Hongwei Liang, Yu Qiu… in Journal of Materials Science: Materials in… (2013)

  3. No Access

    Article

    Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

    Ga2O3 thin films were deposited on c-plane Al2O3 substrates by electron beam evaporation equipment. The effects of post anneal treatment on structure and optical properties of Ga2O3 were investigated. The X-ray d...

    Yi Cheng, Hongwei Liang, Rensheng Shen… in Journal of Materials Science: Materials in… (2013)

  4. No Access

    Article

    Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

    GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H2 in metal organic chemical vapor deposition system. It was found that in situ H2 treatment brought a porous SiC surf...

    Shiwei Song, Rensheng Shen, Hongwei Liang… in Journal of Materials Science: Materials in… (2013)

  5. No Access

    Article

    Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

    GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal–organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching te...

    Dechao Yang, Hongwei Liang, Yu Qiu… in Journal of Materials Science: Materials in… (2014)

  6. No Access

    Article

    Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

    Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality o...

    Kexiong Zhang, Hongwei Liang, Rensheng Shen, Shiwei Song… in Applied Physics A (2014)