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Article
Open AccessIsoelectronic aluminum-doped gallium nitride alpha-voltaic cell with efficiency exceeding 4.5%
Although alpha-voltaic cells have shown great potential in unattended miniaturized systems for compact, long-lifetime and independence of external energy input, the power conversion efficiency of state-of the-...
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Article
Pd-Pt Alloy-Based Hydrogen Sensors Based on Patterned Sapphire Substrate for Wide-Range Hydrogen Detection
In this paper, we present a hydrogen sensor on patterned sapphire substrate (PSS). The sensor not only outperforms pure palladium (Pd) hydrogen sensors in terms of sensitivity, but also enables a wide range of...
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Article
The role of telomere dysfunction in genomic instability and age-related diseases
Telomeres are specialized structures located at the ends of chromosomes that are critical for maintaining genomic integrity. Telomeres are shortened during each cycle of cell division because chromosomes are n...
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Article
Open AccessP-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interf...
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Article
The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition
The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomi...
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Article
Open AccessLow Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent soluti...
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Article
Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth
Mg-doped, 1-μm-thick, p-type GaN films were grown by metal-organic chemical vapor deposition using indium-assisted method. The influence of flow rate ratio of indium to magnesium (In/Mg ratio) on the quality o...
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Article
Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate
GaN epilayer was grown on a new polyhedral patterned sapphire substrate (new PSS) by metal–organic chemical vapor deposition. The new PSS was prepared by combining the dry etching technique and wet etching te...
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Article
Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment
GaN epilayers were grown on the Si-terminated (0001) 6H-SiC substrates pre-treated by in situ H2 in metal organic chemical vapor deposition system. It was found that in situ H2 treatment brought a porous SiC surf...
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Article
Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer
Improved structural quality and tensile stress releasing were realized in GaN thin films grown on 6H–SiC by metal organic chemical vapor deposition using an in situ porous SiNx interlayer. The SiNx was formed in ...
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Article
Open AccessPC3 prostate tumor-initiating cells with molecular profile FAM65Bhigh/MFI2low/LEF1low increase tumor angiogenesis
Cancer stem-like cells are proposed to sustain solid tumors by virtue of their capacity for self-renewal and differentiation to cells that comprise the bulk of the tumor, and have been identified for a variety...
