![Loading...](https://link.springer.com/static/c4a417b97a76cc2980e3c25e2271af3129e08bbe/images/pdf-preview/spacer.gif)
-
Article
Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition
Aluminum (Al) pre-deposition technology was employed to grow high-quality AlGaN/GaN heterostructures on c-plane sapphire substrates by metal organic chemical vapor deposition. The effects of Al pre-deposition tim...
-
Article
Open AccessHigh-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs)...
-
Article
Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure
In this work, β-Ga2O3 films are obtained by the RF magnetron sputtering method. Effects of the growth pressure on properties of the deposited β-Ga2O3 films and the corresponding solar-blind metal–semiconductor–me...