-
Article
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate
A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors (HEMTs) on SiC substrates is presented. The fabricated p-GaN HEMT with a gate-drain spacing LGD = 5 µm exhibited a threshold voltage of...
-
Article
Core-shell structured Fe2O3/CeO2@MnO2 microspheres with abundant surface oxygen for sensitive solid-phase microextraction of polycyclic aromatic hydrocarbons from water
Core-shell structured Fe2O3/CeO2@MnO2 microspheres were fabricated and used as solid-phase microextraction coating for determination of polycyclic aromatic hydrocarbons (PAHs) in water samples. XPS spectra demons...
-
Article
Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids
InGaN/GaN multiple quantum-well (MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO2 stripe patterns along the [11-20] and [1-100] directions as a mask. Th...
-
Article
Influence of Al pre-deposition time on AlGaN/GaN heterostructures grown on sapphire substrate by metal organic chemical vapor deposition
Aluminum (Al) pre-deposition technology was employed to grow high-quality AlGaN/GaN heterostructures on c-plane sapphire substrates by metal organic chemical vapor deposition. The effects of Al pre-deposition tim...
-
Article
Open AccessHigh-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs)...
-
Article
Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition
In this work, (-2 0 1) β-Ga2O3 films are grown on GaN substrate by metal organic chemical vapor deposition (MOCVD). It is revealed that the β-Ga2O3 film grown on GaN possesses superior crystal quality, material h...
-
Article
Open AccessHigh-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration
A high-performance transfer printing method using a new soluble tape which can be dissolved in acetone is proposed to be used in heterogeneous integration. Si inks array was transferred from SOI wafers onto va...
-
Article
Improving the production of high-performance solar-blind β-Ga2O3 photodetectors by controlling the growth pressure
In this work, β-Ga2O3 films are obtained by the RF magnetron sputtering method. Effects of the growth pressure on properties of the deposited β-Ga2O3 films and the corresponding solar-blind metal–semiconductor–me...
-
Article
Conductometric acetone vapor sensor based on the use of gold-doped three-dimensional hierarchical porous zinc oxide microspheres
A versatile nanoprobe for acetone vapor was designed and fabricated. It is based on the use of gold-doped three-dimensional (3D) hierarchical porous zinc oxide microspheres (Au/ZnO HPMSs). The nanoprobe was sy...
-
Article
Study on growing thick AlGaN layer on c-plane sapphire substrate and free-standing GaN substrate
In this study, the thick AlGaN epilayers have been grown on the c-plane sapphire substrate and the free-standing GaN substrate using low-temperature AlN nucleation layers by low-pressure metal-organic chemical...
-
Article
Proton irradiation effects on HVPE GaN
GaNs grown by hydride vapor phase epitaxy (HVPE) were irradiated by protons with different fluences. The changes of surface topography of as-grown and irradiated samples were characterized by atomic force micr...
-
Article
Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
Si-doped (11–20) a-plane GaN grown on (1–102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition. The optical and electrical properties of the Si-doped a-plane GaN films were inves...
