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Article
Enhancement of optical characteristic of InGaN/GaN multiple quantum-well structures by self-growing air voids
InGaN/GaN multiple quantum-well (MQW) structures with a wavelength range of green were successfully grown on a c-plane GaN template with SiO2 stripe patterns along the [11-20] and [1-100] directions as a mask. Th...
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Article
Proton irradiation effects on HVPE GaN
GaNs grown by hydride vapor phase epitaxy (HVPE) were irradiated by protons with different fluences. The changes of surface topography of as-grown and irradiated samples were characterized by atomic force micr...
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Article
Optical and electrical properties of Si-doped in a-plane GaN grown on r-plane sapphire
Si-doped (11–20) a-plane GaN grown on (1–102) r-plane sapphire substrate was obtained by metal organic chemical vapor deposition. The optical and electrical properties of the Si-doped a-plane GaN films were inves...