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    1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate

    A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors (HEMTs) on SiC substrates is presented. The fabricated p-GaN HEMT with a gate-drain spacing LGD = 5 µm exhibited a threshold voltage of...

    Shenglei Zhao, **cheng Zhang, Yachao Zhang… in Science China Information Sciences (2023)