-
Article
HVPE growth of Si crystal with topological chiral morphology
Topological chiral occurs when a crystal has an asymmetric structure that does not overlap with the mirror image. In this study, Si crystals with a topological chiral morphology were grown via mixed-source hyd...
-
Article
Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes
We investigated morphological properties of vertical heterojunction Schottky diodes based on (Al0.1Ga0.9)2O3/4H-SiC (AGO) thin films and analyzed the effect of post-annealing on their temperature-dependent electr...
-
Article
Comparison of electrical characteristics of aerosol-deposited Ga2O3/4H-SiC heterojunctions as a function of thickness
Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing Ga2O3 thin films on 4H-SiC substrates using aerosol deposition (AD). X-ray diffraction (XRD) analysis showed that all Ga2O3 peaks increased with in...
-
Article
Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes
This study investigated the impact of the post-deposition annealing (PDA) process on the material and electrical properties of copper oxide (Cu2O) and nickel oxide (NiO) thin films deposited on a silicon carbide ...
-
Article
Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method
High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments...
-
Article
Growth of hexagonal-shape Si on a 4H–SiC substrate by mixed-source hydride vapor phase epitaxy
The combination of Si and 4H–SiC has potential applications in heterojunction diodes, bipolar-junction transistors, and optoelectronic devices. However, growing crystalline Si on 4H–SiC is challenging owing to...
-
Article
Morphological and Electrical Properties of β-Ga2O3/4H-SiC Heterojunction Diodes
ß-Ga2O3/4H-SiC heterojunction diodes were fabricated by depositing β-Ga2O3 thin films on 4H-SiC substrates using radio frequency sputtering. X-ray diffraction (XRD) analysis revealed increased reflectivity of β-G...
-
Article
Electrical Effect of High-Field Induced Diffusive Metal in the Ceramic Film Deposited by the Aerosol Deposition Method
The electrical behavior of the high-field induced diffusive metal (HFIDM) is demonstrated in ceramic–metal composite film deposited by aerosol deposition (AD) method. To verify the effect of HFIDM, electrical ...
-
Article
Adhesive Mechanism of Al2O3/Cu Composite Film via Aerosol Deposition Process for Application of Film Resistor
Al2O3/Cu composite films, useful for film resistors, were successfully fabricated at room temperature via aerosol deposition (AD). Microstructures of the Al2O3/Cu composite films were analyzed to understand the c...
-
Article
Open AccessApplicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects
In this paper, we demonstrated the feasibility of the Aerosol Deposition (AD) method which can be adapted as a future fabrication process for flexible electronic devices. On the basis of this method’s noticeab...
-
Article
The effect of polymer fill ratio in pillar structure for piezoelectric energy harvester
One method of energy harvesting is to use piezoelectric devices, which are able to interchange electrical energy and mechanical strain or vibration. This study is to experimentally investigate the behavior of ...
-
Article
Improved piezoelectric properties of Ag doped 0.94(K0.5–βNa0.5–δ)NbO3–0.06Li1–γNbO3 ceramics by templated grain growth method
In this work, Ag doped 0.94(K0.5–βNa0.5–δ)NbO3–0.06Li1–γNbO3 lead-free piezoelectric ceramics have been prepared by templated grain growth (TGG) using cubic (K,Na)NbO3 single crystal seeds as templates. Specimens...
-
Article
Open AccessMetal work-function-dependent barrier height of Ni contacts with metal-embedded nanoparticles to 4H-SiC
Metal, typically gold [Au], nanoparticles [NPs] embedded in a cap** metal contact layer onto silicon carbide [SiC] are considered to have practical applications in changing the barrier height of the original...
-
Article
Open AccessEnhanced photo-sensitivity through an increased light-trap** on Si by surface nano-structuring using MWCNT etch mask
We demonstrate an enhanced photo-sensitivity (PS) through an increased light-trap** using surface nano-structuring technique by inductively coupled plasma (ICP) etching on multi-walled carbon nanotube (MWCNT...
-
Article
Open AccessNano-structure fabrication of GaAs using AFM tip-induced local oxidation method: different do** types and plane orientations
In this study, we have fabricated nano-scaled oxide structures on GaAs substrates that are doped in different conductivity types of p- and n-types and plane orientations of GaAs(100) and GaAs(711), respectivel...
-
Article
Open AccessCrystallographic plane-orientation dependent atomic force microscopy-based local oxidation of silicon carbide
The effect of crystalline plane orientations of Silicon carbide (SiC) (a-, m-, and c-planes) on the local oxidation on 4H-SiC using atomic force microscopy (AFM) was investigated. It has been found that the AF...
-
Article
Open AccessAnti-reflective nano- and micro-structures on 4H-SiC for photodiodes
In this study, nano-scale honeycomb-shaped structures with anti-reflection properties were successfully formed on SiC. The surface of 4H-SiC wafer after a conventional photolithography process was etched by in...
-
Article
Open AccessHigh-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due ...
-
Article
Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs
We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal–oxide–semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the s...
-
Article
Silicon Nanowire Electromechanical Switch for Logic Device Application
In this paper, we have reported the fabrication and characterization of nanowire electromechanical switches consisting of chemical-vapor-deposition grown silicon nanowires suspended over metal electrodes. The ...
