50 Result(s)
within
S.P. Wong
Nanotechnology
-
Article
Do** Effect in Hydrogenated Amorphous Carbon Thin Films by Ion Implantation
Hydrogenated amorphous carbon (a-C:H) thin films have been prepared by rf glow discharge decomposition of C6H5CH3 gas at 13.6 MHz. Multi-energy boron or phosphorus implantation into these films has been performed...
-
Article
Modeling of Damage Enhanced Diffusion of Implanted Boron in Silicon
Modeling of the damage enhanced diffusion (DED) behaviors of implanted boron in silicon of Powell’s experiment {xc[1]} has been performed. In his experiment, Powell showed that the diffusion of implanted boron...
-
Article
Optical Waveguides in Thermally Grown SiO2 on Si Using Nitrogen Ion Implantation
Multi-energy nitrogen implantation into thermally grown SiO2 on silicon substrates has been performed and the optical wave-guiding properties of this structure has been studied. The implantation energy used was i...
-
Article
Effects of Fluorine Implantation into Hydrogenated Amorphous Silicon
Multiple-energy implantation of fluorine into rf glow discharge deposited hydrogenated amorphous silicon (a-Si:H) thin films has been performed. It is found that the optical gap decreases with the implanted fl...
-
Article
ESR Study of Porous Silicon
A detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the ...
-
Article
ESR Study of Fluorine Implanted a-Si:H and a-C:H Thin Films
The study of ESR splitting effects induced by fluorine implantation into a-Si:H and a-C:H films has been performed. The implanted fluorine concentration Cp ranges from 1 x 1017 to 6 x 1021 cm-3. It is found that ...
-
Article
Characterization of GeSi Layer Formed by High Dose Ge Implantation into Si
High dose Ge implantation into p-type < 100 > Si wafers at 150 keV has been performed at doses of 3.6×1016, 6.7×1016 and 9.0×1016 cm−2. The Ge distribution and the crystal quality of the implanted layer before an...
-
Article
Spreading Resistance Profiling Study of GeSi/Si Structures by High Dose Ge Implantation into Si
Hetero-structures of GeSi layers on Si have been produced by high dose Ge implantation into p-type (100) Si wafers at 150 or 300 keV at various doses. From spreading resistance profiling measurements, it is fo...
-
Article
Structure and Conductivity of Iodine-Doped C60 Thin Films
We report here the results of our study on the properties of iodine-doped C60 thin films by IR and optical absorption, X-ray diffraction, and electrical conductivity measurements. The results show that there is n...
-
Article
Afm Study of Surface Morphology of High Dose Co Implanted Si with A Mevva Ion Source
The surface morphology of high dose Co implanted Si has been studied by atomic force microscopy. The Co implantation was performed using a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of ...
-
Article
Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS
Ultrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surf...
-
Article
Electrical Characteristics of COSi2 Layers Formed by Mew a Implantation of Co into Si
High dose Co implantation into Si has been performed with a metal vapor vacuum arc (MEVVA) ion source at an extraction voltage of 70 kV to doses from 8×1016 to 6×1017ions cm−2 at substrate temperatures (Ts) in th...
-
Article
Crystalline Grains and Electrical Properties of Vacuum-Evaporated SnO2 Thin Films
We have studied grain growth and electrical properties of polycrystalline tin oxide (SnO2) thin films prepared by vacuum-evaporation with a two-step process: evaporation of tin metal films and then oxidation of t...
-
Article
Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation
Ion beam synthesis of CoSi2 layers in Si by NIEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by X...
-
Article
Stress Distribution in Si Under Patterned thin Film Structures
We have employed the infrared photoelasticity (PE) method to study the stress distribution in Si substrates under patterned thin film structures such as thermal oxide layers partially covered by metal films an...
-
Article
Ion Beam Synthesis of SiC/Si Heterostructures by MEVVA Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MIEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were chara...
-
Article
Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation
Ion beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XT...
-
Article
Ion Beam Synthesis of SiC/Si Heterostructures by Mevva Implantation
Ion beam synthesis of SiC/Si heterostructures was performed by MEVVA (metal vapor vacuum arc) implantation under various implantation and annealing conditions. The implanted SiC/Si heterostructures were charac...
-
Article
Esr of Purified Carbon Nanotubes Produced Under Different Helium Pressures
Carbon nanotubes were prepared by the dc arc-discharge method under a controlled helium pressure ranging from 10 to 80 kPa and subsequently purified by oxidation in air. The purified carbon nanotubes were obse...
-
Article
Characterization of Carbon Nitride Films Prepared by Magnetic Filtered Plasma Deposition
Carbon nitride films prepared by magnetic filtered plasma deposition were characterized using Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS). Characteristic bands corre...
