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    Double pendeo-epitaxial growth of GaN films with low density of threading dislocation

    A double pendeo-epitaxy technique for growing uniformly GaN films with low defect density over the entire surface of a substrate has been achieved by metalorganic chemical vapor deposition(MOCVD). The structur...

    Y. K. Hong, H. S. Jung, C.-H. Hong, M.H. Kim, S.-J. Leem in MRS Online Proceedings Library (2001)