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    Through wafer via holes manufacturing by variable isotropy Deep RIE process for RF applications

    This paper reports a method on the manufacturing of through silicon wafer via holes with tapered walls by Deep Reactive Ion Etching using the opportunity to change the isotropy in the DRIE equipments during pr...

    D. Vasilache, S. Colpo, F. Giacomozzi, S. Ronchin, S. Gennaro… in Microsystem Technologies (2012)