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Article
Open AccessSimulating the fabrication of aluminium oxide tunnel junctions
Aluminium oxide (AlOx) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the r...
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Article
Open AccessAb initio calculation of energy levels for phosphorus donors in silicon
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modeling of electronic devices on the nanoscale. In this paper we calculate these energy levels from...
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Article
The effect of grain refining on macrosegregation and dendrite arm spacing of direct chill cast AA5182
The effect of titanium and titanium diboride inoculation on the spatial variation of local solidification time for direct chill (DC) cast ingots of aluminum alloy 5182 (AA5182) was studied. The results have be...
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Article
Hydrogen Stabilization of {111} Nanodiamond
Presented here are results of ab initio Density Functional Theory (DFT) structural relaxations performed on dehydrogenated and monohydrogenated nanocrystalline diamond structures of octahedral {111} and cuboct...
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Article
Analysis of Faceted Growth Hillocks in MOCVD Grown Epitaxial HgCdTe on GaAs with a Nuclear Microprobe
Hg1−xCdxTe epitaxial layers on GaAs substrates grown by Metal Organic Chemical Vapour Deposition (MOCVD) display growth defects resembling pyramidal faceted hillocks which appear to originate from defects origina...
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Article
Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.
The techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs subst...