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  1. No Access

    Article

    Short period p-type AlN/AlGaN superlattices for deep UV light emitters.

    The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole c...

    S. Nikishin, B. Borisov, V. Mansurov, M. Pandikunta… in MRS Online Proceedings Library (2020)

  2. No Access

    Article

    Structural, Morphological, Optical and Electrical Properties of Bulk (0001) GaN:Fe Wafers

    Characterization of three vendor’s bulk semi-insulating GaN:Fe wafers, grown by either hydride vapor phase epitaxy or the ammonothermal method, was performed using: scanning electron microscopy, secondary ion ...

    M. Gaddy, V. Kuryatkov, V. Meyers, D. Mauch, J. Dickens, A. Neuber… in MRS Advances (2018)

  3. No Access

    Article

    Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN

    We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN...

    I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev… in MRS Online Proceedings Library (2009)

  4. No Access

    Article

    InN Nano Rods and Epitaxial Layers Grown by HVPE on Sapphire Substrates and GaN, AlGaN, AlN Templates.

    This paper contains results on InN growth by Hydride Vapor Phase Epitaxy (HVPE) on various substrates including sapphire, GaN/sapphire, AlGaN/sapphire, and AlN/sapphire templates. The growth processes were car...

    A. Syrkin, A. Usikov, V. Soukhoveev, O. Kovalenkov… in MRS Online Proceedings Library (2005)

  5. No Access

    Article

    Mechanism of Metalorganic MBE Growth of High Quality AIN on Si (111)

    AlN constitutes the buffer layer of choice for the growth of GaN on all common substrates and its crystalline quality and surface morphology determine many of the properties of the overgrown epitaxial structur...

    I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov… in MRS Online Proceedings Library (2004)

  6. No Access

    Article

    Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

    We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures result...

    S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov… in MRS Online Proceedings Library (2001)