Skip to main content

10 Result(s)

within S. Nahm Remove this filter

and

  1. No Access

    Article

    Crystal Structure of A2+ (Mg1/3Nb2/3)O3, (A2+ = Sr2+ and Ca2+) Ceramics

    C.-S. Park, J. H. Paik, S. Nahm, H.-J. Lee… in Journal of Materials Science Letters (1999)

  2. No Access

    Article

    Self-organization mechanism of GalnP quantum wires in (GaP) m /(lnP) m short-period binary superlattices for GalnP/AllnP multi-quantum-wire (MQWR) lasers

    A mechanism for self-organization of GalnP strained quantum wires in (GaP) m /(lnP) m short-period binary superlattice (SPBS) is discussed. To ...

    J. Yoshida, K. Kishino, D. H. Jang, S. Nahm, I. Nomura… in Optical and Quantum Electronics (1996)

  3. No Access

    Article

    Effects of Post Etch Treatments on Contaminated Silicon Surface Due to CHF3/C2F6 Reactive Ion Etching

    The modification of silicon surface due to reactive ion etching (RIE) using a CHF3 / C2F6 plasma has been characterized using X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS...

    H.-H. Park, K.-H. Kwon, S.-H. Lee, S. Nahm, J.-W. Lee… in MRS Online Proceedings Library (1993)

  4. No Access

    Chapter and Conference Paper

    TEM Study of β-SiC Films Grown on (111) Silicon Substrates

    A transmission electron microscopy study was carried out on β-SiC films grown on Silicon {111} by the CVD technique.1 Both plan view and cross-sectional samples were observed. A high density of interfacial twins ...

    K. Fekade, M. G. Spencer, S. Nahm… in Amorphous and Crystalline Silicon Carbide … (1992)

  5. No Access

    Article

    Structural study of epitaxial MN/AG multilayers

    We have studied the epitaxial growth and structural properties of single crystal Mn/ Ag multilayers grown on (001) GaAs substrates using transmission electron microscopy. A buffer layer of Ag (001) was grown o...

    S. Nahm, L. Salamanca-Riba, B. T. Jonker in Journal of Electronic Materials (1991)

  6. No Access

    Article

    Stability and Decomposition of IV-VI Semiconductor Films

    Pb1-xEuxTe alloys with 0.41 ≤ x ≤ 0.51 have been observed to be unstable when grown at a temperature of 573K on BaF2 substrates. The alloys are stabilized when a buffer layer of PbTe is grown prior to the growth ...

    L. Salamanca-Riba, S. Nahm, M. Wuttig, A. Roitburd… in MRS Online Proceedings Library (1990)

  7. No Access

    Article

    On the Formation of Martensite in In0.77TL0.23.

    It has been proposed that martensite is formed by heterogeneous nucleation and growth or evolves from a precursor. In order to examine these theories, high resolution X-ray diffraction experiments have been pe...

    M. Wuttig, X. Zhou, S. Nahm, J. Li in MRS Online Proceedings Library (1990)

  8. No Access

    Article

    Transmission electron microscopy studies of bismuth films

    We have studied the structure of Bi films grown on BaF2 substrates as a function of the distance from the interface with the substrate. Close to the interface the films show a polycrystalline structure and probab...

    S. Nahm, L. Salamanca-Riba, D. L. Partin, J. Heremans in Journal of Materials Research (1990)

  9. No Access

    Article

    A TEM study of Epitaxial FE/AG and MN/AG Superlattices

    We have studied the epitaxial growth and structural properities of single crystal Fe/Ag and Mn/Ag superlattices grown on (001) GaAs substrates using transmission electron microscopy. A buffer layer of Ag (001)...

    S. Nahm, L. Salamanca-Riba, B. T. Jonker, G. A. Prinz in MRS Online Proceedings Library (1989)

  10. No Access

    Article

    Stability of Pb1−xEuxTe Alloys

    We present high resolution transmission electron microscopy results of Pb1−xEuxTe alloys that show evidence for a compositional instability for x ≈ 0.5 when the alloys are grown on BaF2 substrates. The Pb1−xEuxTe...

    L. Salamanca-Young, M. Wuttig, S. Nahm, D.L. Partin… in MRS Online Proceedings Library (1988)