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    Pulsed laser annealing of self-organized InAs/GaAs quantum dots

    The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In0.4Ga0.6As/GaAs quantum dots has been investigated. It is found that such annea...

    S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips… in Journal of Electronic Materials (2004)