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  1. No Access

    Article

    Spectroscopic Investigation of Traps Producing Current Collapse In AlGaN/GaN Hemt Structures

    Photoionization spectroscopy (PS) measurements, previously carried out for the GaN MESFET, have been extended to the more complicated AlGaN/GaN HEMT structures. In all cases, the spectra revealed that the same...

    P. B. Klein, S. C. Binari, K. Ikossi, A. E. Wickenden… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures

    Results of a systematic study of the current vs. voltage characteristics of ungated AIGaN/GaN heterostructures grown on sapphire substrates are presented. It is experimentally observed that the saturation curr...

    J. D. Albrecht, P. P. Rudento, S. C. Binari… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Correlation of Drain Current Pulsed Response with Microwave Power Output in AlGaN/GaN HEMTs

    The drain-current response to short (<1μs) gate pulses has been measured for a series of GaN HEMT wafers that have similar dc and small-signal characteristics. This response has been found to correlate well wi...

    S. C. Binari, K. Ikossi-Anastasiou, W. Kruppa… in MRS Online Proceedings Library (2011)

  4. No Access

    Article

    Photoionization Spectra of Traps Responsible for Current Collapse in GaN MESFETs

    Current collapse in GaN MESFETS is believed to result from the trap** of carriers in the high resistivity GaN layer, and can be reversed by the application of light. Light photoionizes (or photoneutralizes) ...

    P. B. Klein, J. A. Freitas Jr, S. C. Binari in MRS Online Proceedings Library (2011)

  5. Article

    Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors

    Extrinsic effects on the DC output characteristics of AlGaN/GaN HFETs with 1 m gate lengths are examined. The devices investigated were fabricated on MOCVD-grown AlGaN/ GaN heterostructures on sapphire substra...

    P.P. Ruden, J.D. Albrecht, A. Sutandi… in MRS Internet Journal of Nitride Semiconduc… (1999)

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    Article

    Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications

    We have shown the ability to grow thin, high mobility, GaN channel layers on high quality, highly resistive GaN. The growth, characteristics, and device results of two types of MESFET structures were discussed...

    K. Doverspike, A.E. Wickenden, S.C. Binari, D.K. Gaskill… in MRS Online Proceedings Library (1995)

  7. No Access

    Chapter

    Diamond MIS Capacitors with Silicon Dioxide Dielectric

    Diamond Metal-Insulator-Semiconchictor (MIS) devices hold great potential for applications requiring long storage times and superlative mechanical, electrical, and chemical properties. In particular, diamond i...

    M. J. Marchywka, D. Moses, S. C. Binari… in Wide Band Gap Electronic Materials (1995)