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  1. Article

    Open Access

    Two-Photon Laser Lithography of Functional Microstructures of Integrated Photonics: Waveguides, Microcavities, and Prism Input/Output Adapters of Optical Radiation

    The development and optimization of methods for creating functional elements of micron and sub-micron sizes for photonic integrated circuits is one of the main tasks of nanophotonics. Two-photon laser lithogra...

    A. I. Maydykovskiy, D. A. Apostolov, E. A. Mamonov, D. A. Kopylov… in JETP Letters (2023)

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    Article

    A Multi-Electrode System for the Implementation of Solid-State Quantum Devices Based on a Disordered System of Dopant Atoms in Silicon

    In this work, we present a nanoscale solid state structure, which is a 3D-array of tunnel-coupled arsenic dopants in silicon with a system of metallic electrodes leading to them. The structures of eight metal ...

    S. A. Dagesyan, S. Yu. Ryzhenkova, I. V. Sapkov… in Moscow University Physics Bulletin (2020)

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    Article

    A Method for Reconstructing the Potential Profile of Surfaces Coated with a Dielectric Layer

    We propose a method of signal amplification for the scanning probe microscope mode, in which the distribution of the surface potential of a sample is measured simultaneously with topography using a local probe...

    I. V. Bozhev, A. S. Trifonov, D. E. Presnov… in Moscow University Physics Bulletin (2020)

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    Article

    Enhancement of the Magneto-Optical Response in Ultra-Thin Ferromagnetic Films and Its Registration Using the Transverse Magneto-Optical Kerr Effect

    Enhancement of the magneto-optical response in ultra-thin ferromagnetic films (less than 100 nm thick) is studied using the transverse magneto-optical Kerr effect. The gyration of the material increases as the...

    O. V. Borovkova, H. Hashim, M. A. Kozhaev… in Bulletin of the Russian Academy of Science… (2019)

  5. No Access

    Article

    Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon

    Here we present CMOS compatible fabrication methods and the results of an experimental study of single-atom single-electron transistors made from silicon on insulator and based on various dopant atoms. Transis...

    D. E. Presnov, S. A. Dagesyan, I. V. Bozhev… in Moscow University Physics Bulletin (2019)

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    Article

    A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center

    A novel technique for the production of metal electrodes of a nanotransistor with a nanogap less than 4 nm between them is developed on the basis of controlling the electromigration of previously suspended nan...

    V. R. Gaydamachenko, E. K. Beloglazkina, R. A. Petrov… in Moscow University Physics Bulletin (2018)

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    Article

    Nanometer Scale Lithography with Evaporated Polystyrene

    We report on a fabrication method of extremely small metallic nanostructures which uses commercially available polystyrene with low molecular weight as a negative resist for electron-beam lithography. The samp...

    G. A. Zharik, S. A. Dagesyan, E. S. Soldatov… in Moscow University Physics Bulletin (2017)

  8. No Access

    Article

    Single-electron transistor with an island formed by several dopant phosphorus atoms

    We present the results of an experimental study of electron transport through individual phosphorus dopants implanted into a silicon crystal. We developed an original technique for single-electron transistor f...

    S. A. Dagesyan, V. V. Shorokhov, D. E. Presnov… in Moscow University Physics Bulletin (2017)

  9. No Access

    Article

    Simulation and optical spectroscopy of a DC discharge in a CH4/H2/N2 mixture during deposition of nanostructured carbon films

    Two-dimensional numerical simulations of a dc discharge in a CH4/H2/N2 mixture in the regime of deposition of nanostructured carbon films are carried out with account of the cathode electron beam effects. The dis...

    K. V. Mironovich, Yu. A. Mankelevich, D. G. Voloshin… in Plasma Physics Reports (2017)

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    Article

    Properties of Extremely Narrow Gaps Between Electrodes of a Molecular Transistor

    An electron transport through the extremely small gaps (1–5 nm wide) formed in narrow and thin gold nanowires by the electromigration method is studied in this work at various temperatures. A careful investiga...

    S. A. Dagesyan, A. S. Stepanov… in Journal of Superconductivity and Novel Mag… (2015)

  11. No Access

    Article

    Forming extremely small gaps in metal nanowires and studying their properties

    A method for forming extremely small gaps (1–5 nm) in planar metallic nanowires for a new generation of nanoelectronic elements is developed using the electromigration effect. The dynamics of forming such gaps...

    S. A. Dagesyan, E. S. Soldatov… in Bulletin of the Russian Academy of Science… (2014)