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Liquid-quenched Ag-Ge alloys; formation and evolution of metastable phases
The formation and decomposition behaviour of metastable structures in liquid-quenched (LQ) Ag-Ge alloys was studied with X-ray diffraction, resistivity measurements and TEM techniques. Pure Ag and alloys conta...
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Article
Phase decomposition in liquid-quenched eutectic Au-Ge alloy
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Article
Effects of oxygen addition on the void-swelling behavior of vanadium
Vanadium-ion irradiation of vanadium alloys containing 1 to 4 at. pct O in solid solution was used to investigate void swelling at temperatures from 550 to 905°C. Voids were observed at all temperatures for V-...
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Article
Magnetoresistance measurements in the bulk amorphous GexSe1−x system
Magnetoresistance (MR) measurements were made on bulk amorphous Ge x Se1−x samples in the temperature range 80 to 300 K and magnetic field up to 8 kG (0.8 T). It is found that M...
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Article
Erosion-corrosion of materials in high-temperature environments: Im**ement angle effects in alloys 310 and 6b under simulated coal gasification atmosphere
The present paper provides a brief overview of the existing knowledge of erosion, hightemperature erosion, and hightemperature CGA erosioncorrosion (EC) phenomena. Experimental results and interpretive analysi...
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Article
Origin of Persistent Photoconductivity in Modulation Doped Amorphous Silicon Multilayers
We show that persistent photoconductivity (PPC) observed in npn … multilayers of hydrogenated amorphous silicon (a-Si:H) and compensated thin a-Si:H films have a common origin. It is caused by special centers ...
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Article
Effect of Surface Treatments in Nanocrystalline Silicon
Exposure to ammonia (NH3) increases the dark current (DC) in porous silicon (PS), but evaporated selenium (Se) deposited on PS decreases DC. Photoluminescence (PL) measurement shows that there are two types of ce...
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Article
Potential fluctuations and metastabilities in hydrogenated amorphous silicon
The inhomogeneities present in hydrogenated amorphous silicon (a-Si : H) give rise to potential fluctuations. They influence the electronic properties of a-Si : H in a profound manner. Nevertheless, very few t...
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Article
Surface effects in nanocrystalline silicon
Exposure to ammonia (NH3) increases the dark current (DC) in nanocrystalline silicon. Light soaking (LS) for short periods also enhances the dark current, which remains at a high value for a long time. Pum** al...
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Article
Comparison of the Effect of Light Soaking in Porous Silicon and a-Si:H
In undoped a-Si:H thin films, light soaking (LS) decreases dark current and photocurrent and increases the electron spin resonance signal monotonically with increasing exposure time, (Staebler-Wronski Effect, ...
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Article
Why phase-change Materials work: An EXAFS Investigation of Ge-Sb-Te Alloys
Studies of amorphous (a-) semiconductors have been driven by technological advances as well as fundamental theories. Observation of electrical switching, for example, fueled early interest in a-chalcogenides. ...
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Article
Role of Surface on the Persistent Photoconductivity in Porous Silicon and Boron Doped a-Si:H
The effect of ambient conditions on light soaking (LS) in porous silicon (PS) is studied. In vacuum, LS on porous silicon increases dark current (DC) while in presence of water vapor it decreases DC. Interesti...
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Article
Light and Thermally Induced Metastabilities in Nanocrystalline Silicon
Light soaking for short durations and thermal quenching produce metastable states having a higher dark current, higher photo current, a larger photoluminescence and a smaller electron spin resonance signal in ...