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  1. No Access

    Article

    Improved oxidation resistance of group VB refractory metals by Al+ ion implantation

    Aluminum ion implantation of vanadium, niobium, and tantalum improved the metals’ oxidation resistances at 500 °C and 735 °C. Implanted vanadium oxidized only to one-third the extent of unimplanted vanadium wh...

    J. M. Hampikian, M. Saqib, D. I. Potter in Metallurgical and Materials Transactions B (1996)

  2. No Access

    Article

    Sputter-induced pits on {100} nickel surfaces

    Nickel (Ni+) ions of 180 keV energy im**ing on {100} faces of nickel single crystals produce sputtered surfaces. Examination of these surfaces exposed to fluences up to 8 X 1017 ions/cm2 and at temperatures bet...

    J. K. Steele, D. I. Potter in Metallurgical and Materials Transactions A (1996)

  3. No Access

    Article

    The effects of yttrium ion implantation on the oxidation of nickel-chromium alloys. I. The microstructures of yttrium implanted nickel-chromium alloys

    Yttrium ions of 150 keV energy were implanted into the alloys Ni-20Cr, Ni-4Cr, and into nickel. The microstructures were then characterized using transmission electron microscopy, selected area channeling patt...

    J. M. Hampikian, D. I. Potter in Oxidation of Metals (1992)

  4. No Access

    Article

    The effects of yttrium ion implantation on the oxidation of nickel-chromium alloys. II. Oxidation of yttrium implanted Ni-20Cr

    Yttrium ions were implanted into an alloy of nickel containing 20 wt.% chromium. The oxidation weight gains of the implanted alloy, as well as unimplanted Ni-20Cr, were measured in 1 atm. of oxygen at temperat...

    J. M. Hampikian, D. I. Potter in Oxidation of Metals (1992)

  5. No Access

    Article

    Improving tantalum's oxidation resistance by Al+ ion implantation

    Tantalum was implanted with 180 keV Al+ ions to fluences up to 3×1018 Al+/cm2. Subsequent microchemical and microstructural observations showed that an amorphous layer covered the surface and extended to depths n...

    M. Saqib, J. M. Hampikian, D. I. Potter in Metallurgical Transactions A (1989)

  6. No Access

    Article

    Silicon-Nickel Compounds by Ion Implantation

    Compounds of silicon and nickel have been formed by implanting silicon ions into nickel at various fluences and temperatures. Temperature during implantation is a major factor controlling implanted ion concent...

    S. G. B. Mayer, F. F. Milillo, D. I. Potter in MRS Online Proceedings Library (1984)

  7. No Access

    Article

    Microstructural Developments During Implantation of Metals

    The chemical and microstructural changes caused by the direct implantation of solutes into metals are examined. The particular case involving Al+-ion implantation into nickel is treated in detail. Chemical compos...

    D. I. Potter, M. Ahmed, S. Lamond in MRS Online Proceedings Library (1983)

  8. No Access

    Article

    Metallurgical Surfaces Produced by Ion Implantation

    Ion implantation, the process of embedding ions accelerated through high voltages, is described as a metallurgical tool for altering surface microstructure and properties. Examples of applications to improve r...

    D. I. Potter, M. Ahmed, S. Lamond in JOM (1983)

  9. No Access

    Article

    Effects of oxygen addition on the void-swelling behavior of vanadium

    Vanadium-ion irradiation of vanadium alloys containing 1 to 4 at. pct O in solid solution was used to investigate void swelling at temperatures from 550 to 905°C. Voids were observed at all temperatures for V-...

    S. C. Agarwal, D. I. Potter, A. Taylor in Metallurgical Transactions A (1978)

  10. No Access

    Article

    Interstitial ordering and precipitation in dilute Ta-O alloys at 100 to 270°C

    Dilute solid solutions of bulk tantalum containing up to 4 at. pct oxygen were aged at tem-peratures from 100 to 270°C. The formation of the most dilute suboxide was monitored using transmission-electron micro...

    F. F. Milillo, D. I. Potter in Metallurgical Transactions A (1978)

  11. No Access

    Article

    Phase equilibria in the metal-rich side of the Ta-N system

    The region of the Ta−N system with nitrogen content less than 20 at. pct and temperature between 350° and 1200°C was investigated using electron microscopy and diffraction and X-ray diffraction. For temperatur...

    R. H. Geils, D. I. Potter in Metallurgical Transactions (1973)