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  1. No Access

    Article

    Role of Surface on the Persistent Photoconductivity in Porous Silicon and Boron Doped a-Si:H

    The effect of ambient conditions on light soaking (LS) in porous silicon (PS) is studied. In vacuum, LS on porous silicon increases dark current (DC) while in presence of water vapor it decreases DC. Interesti...

    S. C. Agarwal, Abhishek Kumar, N. P. Mandal in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Light and Thermally Induced Metastabilities in Nanocrystalline Silicon

    Light soaking for short durations and thermal quenching produce metastable states having a higher dark current, higher photo current, a larger photoluminescence and a smaller electron spin resonance signal in ...

    N. P. Mandal, S. C. Agarwal in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Why phase-change Materials work: An EXAFS Investigation of Ge-Sb-Te Alloys

    Studies of amorphous (a-) semiconductors have been driven by technological advances as well as fundamental theories. Observation of electrical switching, for example, fueled early interest in a-chalcogenides. ...

    D. A. Baker, S. C. Agarwal, G. Lucovsky, M. A. Paesler… in MRS Online Proceedings Library (2006)

  4. No Access

    Article

    Comparison of the Effect of Light Soaking in Porous Silicon and a-Si:H

    In undoped a-Si:H thin films, light soaking (LS) decreases dark current and photocurrent and increases the electron spin resonance signal monotonically with increasing exposure time, (Staebler-Wronski Effect, ...

    N.P. Mandal, S.C. Agarwal in MRS Online Proceedings Library (2004)

  5. No Access

    Article

    Effect of Surface Treatments in Nanocrystalline Silicon

    Exposure to ammonia (NH3) increases the dark current (DC) in porous silicon (PS), but evaporated selenium (Se) deposited on PS decreases DC. Photoluminescence (PL) measurement shows that there are two types of ce...

    N. P. Mandal, S. Dey, S. C. Agarwal in MRS Online Proceedings Library (2002)

  6. No Access

    Article

    Origin of Persistent Photoconductivity in Modulation Doped Amorphous Silicon Multilayers

    We show that persistent photoconductivity (PPC) observed in npn … multilayers of hydrogenated amorphous silicon (a-Si:H) and compensated thin a-Si:H films have a common origin. It is caused by special centers ...

    S. C. Agarwal, S. Guha in MRS Online Proceedings Library (1986)

  7. No Access

    Article

    Effects of oxygen addition on the void-swelling behavior of vanadium

    Vanadium-ion irradiation of vanadium alloys containing 1 to 4 at. pct O in solid solution was used to investigate void swelling at temperatures from 550 to 905°C. Voids were observed at all temperatures for V-...

    S. C. Agarwal, D. I. Potter, A. Taylor in Metallurgical Transactions A (1978)