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    Article

    AlGaN/GaN HFETs for Automotive Applications

    AlGaN/GaN heterojunction field effect transistors (HFET) on sapphire substrates have demonstrated ability as power devices operating with high current densities and high breakdown voltages. Additionally, AlGaN...

    Ronald Birkhahn, David Gotthold, Nathan Cauffman… in MRS Online Proceedings Library (2011)

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    Article

    Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride

    Gold, palladium, platinum or nickel ohmic contacts on Mg doped p-type AlxGa1-xN with x = 0.4 and x = 0.45 have been examined. The Au contact provided the lowest contact resistivity with pc = 1.8 (± 1.1) x 10−3 Ωc...

    Brett A. Hull, Suzanne E. Mohney, Uttiya Chowdhury… in MRS Online Proceedings Library (2011)

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    Article

    Recombination Related to Two-Dimensional Electron Gas of AlxGa1−xN/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence

    Nearbandgap radiative recombination in undoped AlxGa1−xN/GaN (x = 0.28 to 0.35) single heterostructures grown by metalorganic chemical vapor deposition is investigated using picosecond time-resolved photoluminesc...

    Qing Yang, Rob Armitage, Eicke R. Weber, Ronald Birkhahn… in MRS Online Proceedings Library (2003)