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  1. No Access

    Article

    Molecular structure of poly(siloxaneimide) films and the rate of charge relaxation

    The length of the thermodynamically flexible siloxane block of the macromolecules under study is shown to affect the rate of relaxation of charge buildup by corona discharge in thin polymer films. The experime...

    A. N. Ionov, M. N. Nikolaeva, O. F. Pozdnyakov… in Polymer Science Series A (2008)

  2. No Access

    Article

    Local distribution of high-conductivity regions in polyamide thin films

    Conducting points with ohmic conduction are observed in polyamide thin films by the atomic force microscopy method. The correlation between the distribution of highly conducting points and the roughness of the...

    A. N. Ionov, M. N. Nikolaeva, R. Rentzsch in JETP Letters (2007)

  3. No Access

    Article

    Orbital and spin effects in the low-temperature behavior of the magnetoresistance of doped CdTe crystals

    An observation of the suppression of negative magnetoresistance in samples of doped CdTe that are far from the metal-insulator transition as the temperature is lowered in the temperature range 3–0.4 K was prev...

    N. V. Agrinskaya, V. I. Kozub, R. Rentzsch… in Journal of Experimental and Theoretical Ph… (1997)

  4. No Access

    Article

    Esr of heavily neutron-transmutation-doped germanium

    Integrated electron spin resonance is used to monitor the magnetic properties of the electron spin in a sample of NTD Ge using temperatures down to 40 mK and uniaxial stresses up to 0.36 GPa. The sample densit...

    D. P. Tunstall, P. J. Mason, A. N. Ionov, R. Rentzsch… in Czechoslovak Journal of Physics (1996)

  5. No Access

    Article

    On the negative magnetoresistance puzzle at variable range hop** at low temperatures

    In this work, we report the results of magnetoresistance studies of variable range hop** down to 30 mK in isotopically engineered Ge with low compensation, and in n-CdTe crystals. Experimentally we find a de...

    R. Rentzsch, B. Sandow, A. N. Ionov, N. V. Agrinskaya… in Czechoslovak Journal of Physics (1996)

  6. No Access

    Article

    Role of electron “lakes” in the negative magnetoresistance effect in the region of Mott hop** conductivity

    It is shown for doped and compensated germanium that the appearance of negative magnetoresistance under the conditions of Mott hop** conductivity may be due to the presence of a nonuniform spatial distributi...

    A. N. Ionov, R. Rentzsch, I. Shlimak in Journal of Experimental and Theoretical Ph… (1996)

  7. No Access

    Chapter and Conference Paper

    Electron-Phonon Interaction in NTD Ge Irradiated in 1980

    Neutron transmutation doped (NTD) Ge has been used by several groups as thermometric sensors [1] in cryogenic particle detectors. Pure Ge single crystals are irradiated with thermal neutrons in a reactor.

    P. Stefanyi, R. Rentzsch, P. Fozooni… in Phonon Scattering in Condensed Matter VII (1993)