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Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

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  1. Article

    High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors

    We present results on the growth of Al-Ga-In-N films in multiwafer reactors with 7×2′ wafer capacity. The design of these reactors allows the combination of high efficiency (TMGa efficiency for GaN around 30%)...

    D. Schmitz, R. Beccard, O. Schoen… in MRS Internet Journal of Nitride Semiconduc… (2014)

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  2. Article

    Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

    We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measure...

    T. Paskova, S. Tungasmita, E. Valcheva… in MRS Internet Journal of Nitride Semiconduc… (2000)

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