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Article
Short period p-type AlN/AlGaN superlattices for deep UV light emitters.
The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole c...
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Article
Effect of milling time and heat treatment on the composition of CuIn0.75Ga0.25Se2 nanoparticle precursors and films
Preparation of pure phase CuIn0.75Ga0.25Se2 nanoparticle powder by ball milling technique has been confirmed for the milling time of more than 45 min at 1200 rpm. Formation of shear bands responsible for breakdow...
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Article
Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma
We report on a systematic study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by...
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Article
Mechano-chemical Synthesis, Deposition and Structural Characterization of CIGS
CuInGaSe2 (CIGS) is a prominent thin-film photovoltaic material. However, commonly used physical vapour deposition and sputtering techniques used to fabricate CIGS thin-film photovoltaic (PV) devices are complex ...
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Article
Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN
We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN...
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Article
Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution
We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition r...
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Article
Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire
We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures result...
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Article
Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis
Zinc oxide thin films doped with zirconium were prepared from solutions with do** material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic...
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Article
ZnO: In Thin Films Prepared with Different Precursor Salts by Spray Pyrolysis and Studied by Electron Microscopy.
In this work we present some results of a systematical study of structural and optoelectronic properties of Zn O: In thin films obtained by spray pyrolysis when the acidity and the solvent used in starting sol...
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Article
Quantitative Measurement of Hydrogen Content in a-Si:H by Ar+ Excited Auger.
Hydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy conversion devices in a large scale. Hydrogen has the capability of terminating the dangling bonds in the amorphous si...