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9 Result(s)

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  1. No Access

    Article

    Short period p-type AlN/AlGaN superlattices for deep UV light emitters.

    The Mg doped AlN/AlxGa1-xN (0.03 ≤ x ≤ 0.05) short period superlattices (SPSLs) were grown by gas source molecular beam epitaxy on (0001) sapphire substrates. The average AlN mole fraction is ∼ 0.7 and the hole c...

    S. Nikishin, B. Borisov, V. Mansurov, M. Pandikunta… in MRS Online Proceedings Library (2020)

  2. No Access

    Article

    Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

    We report on a systematic study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by...

    Andrey Kosarev, L. Sanchez, A. Torres, T. Felter… in MRS Online Proceedings Library (2011)

  3. No Access

    Article

    Mechano-chemical Synthesis, Deposition and Structural Characterization of CIGS

    CuInGaSe2 (CIGS) is a prominent thin-film photovoltaic material. However, commonly used physical vapour deposition and sputtering techniques used to fabricate CIGS thin-film photovoltaic (PV) devices are complex ...

    B. Vidhya, S. Velumani, Jesus Arenas-Alatorre, R. Asomoza in MRS Online Proceedings Library (2010)

  4. No Access

    Article

    Low Resistance Ohmic Contacts Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN

    We report the influence of surface treatment, annealing temperature and metal bilayer thickness on the specific contact resistance (ρc) of Au/Ni ohmic contacts to p-GaN and p-AlGaN. Ohmic contact on p-GaN...

    I. Chary, B. Borisov, V. Kuryatkov, Yu. Kudryavtsev… in MRS Online Proceedings Library (2009)

  5. No Access

    Article

    Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

    We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition r...

    A. Kosarev, A. Torres, Y. Hernandez, R. Ambrosio… in Journal of Materials Research (2006)

  6. No Access

    Article

    Gas source molecular beam epitaxy of high quality AlGaN on Si and sapphire

    We report the results of epitaxial growth experiments on AlxGa1−xN (0≤ x ≤ 1) on Si(111) and sapphire substrates aimed at understanding the origin and elimination of cracking. We describe growth procedures result...

    S. Nikishin, G. Kipshidze, V. Kuryatkov, A. Zubrilov… in MRS Online Proceedings Library (2001)

  7. No Access

    Article

    Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

    Zinc oxide thin films doped with zirconium were prepared from solutions with do** material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic...

    A. Maldonado, D. R. Acosta, M. De La Luz Olvera… in MRS Online Proceedings Library (1998)

  8. No Access

    Article

    ZnO: In Thin Films Prepared with Different Precursor Salts by Spray Pyrolysis and Studied by Electron Microscopy.

    In this work we present some results of a systematical study of structural and optoelectronic properties of Zn O: In thin films obtained by spray pyrolysis when the acidity and the solvent used in starting sol...

    D. R. Acosta, O. Lovera, A. Maldonado, R. Asomoza… in MRS Online Proceedings Library (1994)

  9. No Access

    Article

    Quantitative Measurement of Hydrogen Content in a-Si:H by Ar+ Excited Auger.

    Hydrogenated amorphous silicon (a-Si:H) is well known by its applications for solar energy conversion devices in a large scale. Hydrogen has the capability of terminating the dangling bonds in the amorphous si...

    M. H. Farias, G. A. Hirata, L. Cota-Araiza, D. H. Galvan… in MRS Online Proceedings Library (1987)