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  1. No Access

    Article

    Optical and electrical properties of semi-insulating GaN:C grown by MBE

    Semi-insulating wurtzite GaN:C of high optical quality is obtained with CCl4 or CS2 do** sources in plasma-assisted molecular-beam epitaxy in Ga-rich growth conditions. The highest resistivity (107 Ω-cm) is fou...

    R. Armitage, Qing Yang, H. Feick, S. Y. Tzeng, J. Lim… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

    Deep traps in semi-insulating (SI) or high-resistivity C-doped GaN grown by metal-organic chemical-phase deposition or molecular-beam epitaxy have been studied by thermally stimulated current (TSC) spectroscop...

    Z-Q. Fang, D. C. Look, R. Armitage, Q. Yang, E. R. Weber in MRS Online Proceedings Library (2003)

  3. Article

    P- and N-type Do** of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire

    Non-polar a-plane GaN films doped with Si or Mg were grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrates. The ( $$11...

    R. Armitage, Qing Yang, Eicke R. Weber in MRS Internet Journal of Nitride Semiconduc… (2003)

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