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  1. No Access

    Article

    Optical and electrical properties of semi-insulating GaN:C grown by MBE

    Semi-insulating wurtzite GaN:C of high optical quality is obtained with CCl4 or CS2 do** sources in plasma-assisted molecular-beam epitaxy in Ga-rich growth conditions. The highest resistivity (107 Ω-cm) is fou...

    R. Armitage, Qing Yang, H. Feick, S. Y. Tzeng, J. Lim… in MRS Online Proceedings Library (2011)

  2. No Access

    Article

    Defects in FZ-silicon after neutron irradiation—A positron annihilation and photoluminescence study

    Float-zone (FZ) Si irradiated with 1 MeV neutrons was investigated by means of positron annihilation lifetime spectroscopy and photoluminescence. Three types of defects were observed: di-vacancies, small vacan...

    V. Bondarenko, R. Krause-Rehberg, H. Feick, C. Davia in Journal of Materials Science (2004)