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Article
Differential pulse voltammetry of toxic metal ions at the boron-doped CVD diamond electrode
Boron-doped polycrystalline diamond films were grown over a molybdenum substrate by a microwave plasma CVD process using a methane and hydrogen gas mixture at a pressure of 35 ± 1 Torr. Boron do** of diamond...
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Article
Kinetic studies of hydroquinone/quinone at the boron-doped diamond electrode by cyclic voltammetry
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Article
Kinetic studies of hydroquinone_quinone at the boron-doped diamond electrode by cyclic voltammetry
Abstracts are not published in this journal
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Article
Synthetic single-crystal, homoepitaxially grown, CVD diamond capacitor
Homoepitaxially grown diamond film capacitor has been fabricated and tested for capacitance characteristics. Type IIa diamond was chosen for carbon ion implantation and subsequently microwave plasma CVD diamon...
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Article
Characterization of hypervelocity impact craters on chemical vapour-deposited diamond and diamond-like carbon films
Microwave plasma chemical vapour-deposited (CVD) process has been used to grow polycrystalline diamond films over silicon substrates. Diamond-like carbon (DLC) thin films were grown over silicon substrates usi...
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Article
Diamond Growth on (a) Large Mo Cylinders at 30 Torr and (b) Flat Mo at One Atmospheric Pressure of H2 and CH4
(a) Polycrystalline diamond films have been grown on cylindrical Mo substrates by hot filament and microwave plasma CVD techniques using a gas mixture of hydrogen and methane. A single hot tungsten filament has b...
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Article
Plasma Etching and Patterning of CVD Diamond at <100° for Microelectronics Application
Oxidation resistance of diamond is an important characteristic to be considered in many high temperature microelectronics and other applications. We have tested the stability of CVD diamong by exposing to Grou...
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Article
Growth of chemical vapour deposition diamond on large molybdenum cylinders for crossed-field amplifier applications
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Article
AC and DC Polarization and Cyclic Voltammetric Behavior of Boron-Doped CVD Diamond in 0.5M NaCl Solution
Boron-doped diamond has been deposited over a Mo substrate by microwave plasma CVD using methane and hydrogen. Boron do** of diamond has been achieved in situ by using a solid boron source while growing the ...
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Article
Growth of diamond at the atmospheric pressure of hydrogen and methane by a hot-filament technique
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Article
Adhesion and Young’s Modulus of CVD Diamond Thin Films Grown Over Various Substrates
Diamond films were deposited by microwave plasma CVD using H2 and CH4 gas mixture over various substrate materials such as Si, Pd, Be, Cu, Mo, AIN, SiO2, Si3N4, Al2O3, Sapphire, Quartz, Ni-base alloys, single cry...
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Article
Effect of Oxygen on the Textured Diamond Growth over Nickel Substrates
Microwave plasma has been used to grow diamond films using CH4 and H2 over nickel substrates. Nucleation of the diamond has been achieved by manual scratching and ultrasonic agitation of the substrates. The subst...
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Article
Selective Growth of Polycrystalline Diamond Thin Films
Microwave plasma assisted CVD is employed to grow diamond films using a gas mixture of H2 and CH4on various substrates. Diamond has a tendency not to nucleate growth on mirror-smooth finished substrates irrespect...
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Article
Selective Nucleation of Diamond Crystals on the Apex of Silicon Pyramids
Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes patterned sharp apex of silicon pyramids surr...
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Article
Selective growth of polycrystalline diamond thin films on a variety of substrates using selective damaging by ultrasonic agitation
Polycrystalline diamond thin films have been selectively grown on silicon, silicon dioxide, silicon nitride, tantalum, molybdenum, alumina, and sapphire substrates using selective damaging by ultrasonic agitat...
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Article
Selective growth of diamond crystals on the apex of silicon pyramids
Diamond crystals have been selectively grown on the apex of anisotropically chemically etched silicon pyramids. A novel process sequence is developed which exposes a patterned sharp apex of silicon pyramids su...
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Chapter and Conference Paper
Oxidation Studies for 6H-SiC
Polytype 6H silicon carbide samples having polar faces terminated with either carbon (000 \(\bar 1\) ) or silicon (0001) have been oxidized at 810°C for varying times using a microwa...
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Article
Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates
Polycrystalline diamond thin films have been selectively deposited on Si, SiO2, Si3 N4, Ta, Mo, alumina, and sapphire substrates using selective damaging by ultrasonic agitation. Novel processes were developed to...
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Article
Erratum: “Selective and low temperature synthesis of polycrystalline diamond”
After this article was published in the June issue of Journal of Materials Research, one of the authors noticed that the ordinates in Figs. 9(a) through 9(g) and Fig. 11 were labeled incorrectly. In each of these...
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Article
Effect of chromium and phosphorus on the physical properties of iron and titanium-based amorphous metallic alloy films
Amorphous iron and titanium-based alloys containing various amounts of chromium, phosphorus, and boron exhibit high corrosion resistance. We report some physical properties of Fe and Ti-based metallic alloy fi...
