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  1. Article

    Open Access

    Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

    A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trap**-type...

    Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen… in Nanoscale Research Letters (2017)

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    Article

    Indium-free transparent TiOx/Ag/WO3 stacked composite electrode with improved moisture resistance

    Amorphous TiOx, WO3 and Ag mid-layer films were deposited on polyethersulfone (PES) and soda-lime glass via electron beam evaporation at room temperature. The crystallinity, microstructure and surface morphology ...

    Cheng-Hsiung Peng, Pang Shiu Chen… in Journal of Materials Science: Materials in… (2016)

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    Article

    TiOx/Ag/TiOx multilayer for application as a transparent conductive electrode and heat mirror

    Amorphous TiOx films and Ag layer were deposited by electron-beam evaporation on soda-lime glass at room temperature. The details regarding the structure, surface morphology, and optical properties of the as-prep...

    Chu-Chun Wu, Pang Shiu Chen… in Journal of Materials Science: Materials in… (2013)

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    Article

    HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition

    The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film ...

    Pang Shiu Chen, Heng-Yuan Lee, Ching-Chiun Wang… in MRS Online Proceedings Library (2008)