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  1. No Access

    Article

    Angular distribution of photoelectron spectra of solids with allowance for second-order nondipole effects and elastic scattering

    V. I. Nefedov, I. S. Nefedova, V. G. Yarzhemsky, M. B. Trzhaskovskaya… in Doklady Physics (2002)

  2. No Access

    Article

    Adjusting chemical bonding of hard amorphous CSixNy thin films by N*-plasma-assisted pulsed laser deposition

    Hard amorphous carbon silicon nitride thin films have been grown by pulsed laser deposition (PLD) of various carbon silicon nitride targets by using an additional nitrogen RF plasma source on [100] oriented s...

    T. Thärigen, M. Lorenz, K.J. Koivusaari, P. Streubel, R. Hesse… in Applied Physics A (1999)

  3. No Access

    Article

    Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

    Carbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF pl...

    T. Thärigen, V. Riede, G. Lippold, E. Hartmann, R. Hesse… in MRS Online Proceedings Library (1999)

  4. No Access

    Article

    XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

    Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 2...

    T. Thärigen, D. Mayer, R. Hesse, P. Streubel… in Fresenius' Journal of Analytical Chemistry (1999)

  5. No Access

    Article

    Sulfur-modified surface of InP(001): Evidence for sulfur incorporation and surface oxidation

    T. Chassé, A. Chassé, H. Peisert, P. Streubel in Applied Physics A (1997)

  6. No Access

    Article

    Chemical stability of (NH4)2S-passivated InP(001) surfaces – investigations by XPS and XPD

    UV/ozone supported surface oxidation of wet chemically cleaned and sulfurized InP(001) was investigated using XPS in order to study the chemical stability of (NH4)2S-passivated surfaces. Sulfur coverages of abou...

    H. Peisert, P. Streubel, T. Chassé… in Fresenius' Journal of Analytical Chemistry (1997)

  7. No Access

    Article

    Depth profile investigations of metallic layer contacts to GaAs(100) and InP(100) by means of Auger Electron Spectroscopy and sputter technique

    The present technological development in the field of opto-electronics requires a sufficiently high stability of the applied metal-semiconductor contacts because of the thermal and electrical cross-section loa...

    S. Stein, A. Reif, P. Streubel, A. Tschulik… in Fresenius' Journal of Analytical Chemistry (1991)