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  1. No Access

    Article

    Influence of Hydrogenation on Electrical Conduction in HgCdTe Thin Films on Silicon

    HgCdTe is the standard state-of-the-art infrared detector material for space applications. HgCdTe-based infrared photon detector performance can be hindered due to the presence of bulk crystal defects and dang...

    S. Fahey, P. Boieriu, C. Morath, D. Guidry, L. Treider… in Journal of Electronic Materials (2014)

  2. No Access

    Article

    Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes

    Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only inductively coupled plasma (ICP) was used to incorpora...

    P. Boieriu, C. Buurma, R. Bommena, C. Blissett, C. Grein… in Journal of Electronic Materials (2013)

  3. No Access

    Article

    Effects of hydrogen on majority carrier transport and minority carrier lifetimes in long-wavelength infrared HgCdTe on Si

    We present extended results on the use of a hydrogen plasma to passivate the effects of defects in long-wave ir HgCdTe/Si. Annealed and as-grown epilayers, in situ doped with indium, were exposed to a hydrogen...

    P. Boieriu, C. H. Grein, J. Garland, S. Velicu, C. Fulk… in Journal of Electronic Materials (2006)

  4. No Access

    Article

    p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors

    HgTe/CdTe superlattices (SL) have been studied for applications involving the detection of very-long wavelength infrared (VLWIR) detectors. In this study, p-type HgTe/CdTe SLs were grown by molecular beam epit...

    H. S. Jung, P. Boieriu, C. H. Grein in Journal of Electronic Materials (2006)

  5. No Access

    Article

    Monolithically integrated HgCdTe focal plane arrays

    The cost and performance of hybrid HgCdTe infrared (IR) focal plane arrays are constrained by the necessity of fabricating the detector arrays on a CdZnTe substrate. These substrates are expensive, fragile, av...

    S. Velicu, T. S. Lee, C. H. Grein, P. Boieriu… in Journal of Electronic Materials (2005)

  6. No Access

    Article

    Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy

    The HgCdTe infrared detectors and test structures based on dual or multicolor HgCdTe are desirable for various applications. It is important to control both p-and n-type extrinsic do** in these photovoltaic ...

    P. Boieriu, Y. Chen, V. Nathan in Journal of Electronic Materials (2002)

  7. No Access

    Article

    HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

    Conventional HgCdTe infrared detectors need significant cooling in order to reduce noise and leakage currents resulting from thermal generation and recombination processes. Although the need for cooling has lo...

    S. Velicu, G. Badano, Y. Selamet, C. H. Grein… in Journal of Electronic Materials (2001)

  8. No Access

    Article

    MBE growth and device processing of MWIR HgCdTe on large area Si substrates

    The traditional substrate of choice for HgCdTe material growth has been lattice matched bulk CdZnTe material. However, as larger array sizes are required for future devices, it is evident that current size lim...

    G. Brill, S. Velicu, P. Boieriu, Y. Chen, N. K. Dhar… in Journal of Electronic Materials (2001)

  9. No Access

    Article

    Selective epitaxy of cadmium telluride on silicon by MBE

    CdTe \((\bar 1\bar 1\bar 1)\) B was grown on As-terminated Si(111) by molecular beam epitaxy (MBE). Nucleation and interface p...

    R. Sporken, D. Grajewski, Y. **n, F. Wiame, G. Brill… in Journal of Electronic Materials (2000)

  10. No Access

    Article

    Wurtzite CdS on CdTe grown by molecular beam epitaxy

    Growth of single crystal wurtzite cadmium sulfide on CdTe(111)B substrates has been achieved using molecular beam epitaxy. Reflection high-energy electron diffraction (RHEED) indicates smooth surface morpholog...

    P. Boieriu, R. Sporken, Yan **n, N. D. Browning… in Journal of Electronic Materials (2000)