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  1. No Access

    Article

    The nature of point defects in CdTe

    High temperature in-situ Hall effect measurements in CdTe single crystals grown by different techniques at 500–1,200 K under well-defined Cd and Te vapor pressure were made. It was established that native poin...

    P. Fochuk, R. Grill, O. Panchuk in Journal of Electronic Materials (2006)

  2. No Access

    Chapter and Conference Paper

    Experimental Verification of Calculated Lattice Relaxations Around Impurities in CdTe

    We have measured the lattice distortion around As (acceptor) and Br (donor) in CdTe with fluorescence detected X-ray absorption spectroscopy. We could experimentally verify the lattice relaxation with a bond l...

    H. -E. Mahnke, H. Haas, V. Koteski, N. Novakovic, P. Fochuk, O. Panchuk in HFI/NQI 2004 (2005)

  3. No Access

    Article

    Experimental Verification of Calculated Lattice Relaxations Around Impurities in CdTE

    We have measured the lattice distortion around As (acceptor) and Br (donor) in CdTe with fluorescence detected X-ray absorption spectroscopy. We could experimentally verify the lattice relaxation with a bond l...

    H.-E. Mahnke, H. Haas, V. Koteski, N. Novakovic, P. Fochuk… in Hyperfine Interactions (2004)