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Article
The influence of the sapphire substrate on the temperature dependence of the GaN bandgap
This paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for t...
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Article
Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer
We demonstrate that the use of pure gallium (Ga) as a buffer layer results in improved crystal quality of GaN epilayers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. The resulting epilayers...