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  1. No Access

    Article

    The influence of the sapphire substrate on the temperature dependence of the GaN bandgap

    This paper analyses the influence of the sapphire substrate on stress in GaN epilayers in the temperature range between 4K and 600K. Removal of the substrate by a laser assisted liftoff technique allows, for t...

    Joachim Krüiger, Noad Shapiro, Sudhir Subramanya… in MRS Online Proceedings Library (2011)

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    Article

    Improved Heteroepitaxial MBE GaN Growth with a Ga Metal Buffer Layer

    We demonstrate that the use of pure gallium (Ga) as a buffer layer results in improved crystal quality of GaN epilayers grown by plasma-assisted molecular beam epitaxy on c-plane sapphire. The resulting epilayers...

    Yihwan Kim, Sudhir G. Subramanya, Joachim Krueger… in MRS Online Proceedings Library (1994)