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  1. No Access

    Article

    Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example

    Results of a comprehensive analysis of process variables of TiN/Ti diffuse barrier structures used in modern microelectronics are presented. To provide reliable spectral ellipsometry results, which is a common...

    D. I. Smirnov, R. M. Giniyatyllin, I. Yu. Zyul’kov… in Technical Physics Letters (2013)

  2. No Access

    Article

    Specific features of relief formation on silicon etched by a focused ion beam

    The effect of a focused ion beam on the state of a silicon crystal surface has been studied. Periodic ring-shaped ribs have been observed on the walls of an etched cylindrical hole. The formation of periodic s...

    N. N. Gerasimenko, A. A. Chamov, N. A. Medetov, V. A. Khanin in Technical Physics Letters (2010)

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    Article

    Relative x-ray reflectometry of discrete layered structures

    The relative x-ray reflectometry (RXR) technique has been used for the first time for determining the parameters of a discrete layered structure. The scheme of x-ray optics used for these measurements on two w...

    A. G. Tur’yanskiĭ, S. A. Aprelov, N. N. Gerasimenko… in Technical Physics Letters (2007)