22 Result(s)

Article

Effect of long-term storage on the electronic structure of semiconducting silicon wafers implanted by rhenium ions

Rhenium-doped silicon samples had been synthesized by means of re-pulsed ion implantation (fluences 2.5 × 10¹⁷ cm⁻², 1 × 10¹⁷ cm⁻² and 5 × 10¹⁶ cm⁻²) and then stored under natural air-media conditions 5 years. Th...

D. A. Zatsepin, D. W. Boukhvalov, A. F. Zatsepin… in Journal of Materials Science (2021)

Article

Using Combined Optical Techniques to Control the Shallow Etching Process

Controlling the procedure for etching shallow trench insulation (STI) is part of the CMOS production cycle. Optical scatterometry, which allows the simultaneous replacement of several techniques used earlier, ...

A. D. Volokhovskiy, N. N. Gerasimenko, D. S. Petrakov in Semiconductors (2018)

Article

Ion Synthesis: Si–Ge Quantum Dots

We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10¹⁴ to 10¹⁷ cm^–2, ion energies ranged from...

N. N. Gerasimenko, N. S. Balakleyskiy, A. D. Volokhovskiy, D. I. Smirnov… in Semiconductors (2018)

Article

Application of Two-Wavelength X-Ray Optical Scheme for Combined Measurements of X-Ray Specular Reflection and Diffuse Scattering to Study Multilayered Thin Film Structures

The complex study results of the parameters of TiN/Ti diffusion-barrier structures using the methods of relative X-ray reflectometry and diffuse scattering of X-ray radiation implemented by a two-wavelength X-...

D. I. Smirnov, N. N. Gerasimenko, V. V. Ovchinnikov in Russian Microelectronics (2017)

Article

Production of Silicon Nanoparticles for Use in Solar Cells

The technological process of the production of silicon nanoparticles from silicon monoxide and methods of the deposition of nanosilicon coatings onto solar cells are developed. The process makes it possible to...

B. G. Gribov, K. V. Zinov’ev, O. N. Kalashnik, N. N. Gerasimenko… in Semiconductors (2017)

Article

Methods for suppressing optical crosstalk between the cells of a silicon photomultiplier array

Methods for suppressing optical crosstalk between cells in silicon photomultipliers were experimentally studied. The mechanisms of optical crosstalk suppression are considered and the extent of the effect of e...

A. A. Zhukov, E. V. Popova, N. N. Gerasimenko in Semiconductors (2016)

Article

Nanoporosity of Si (100) bars

Si(100) samples cut from a typical bar (100 mm in diameter) prepared using industrial technology are studied. Measurements of the electron work function (EWF) show that the size effects in these samples (a red...

S. N. Novikov, S. P. Timoshenkov, V. S. Minaev… in Russian Journal of Physical Chemistry A (2016)

Article

Influence of size effects on the radiation stability of nanocrystalline materials

The data reported in publications are analyzed, and on this basis, problems arising in studies of the radiation stability of nanostructures and nanomaterials are formulated. A phenomenological model of the rad...

N. N. Gerasimenko, D. I. Smirnov, N. A. Medetov, O. A. Zaporozhan in Semiconductors (2014)

Article

On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example

Upon the prolonged anodic etching of single-crystalline silicon p-Si(100) in electrolytes with an internal current source, crack formation is observed. It is shown that the cracks are formed under the conditions ...

N. N. Gerasimenko, K. B. Tynyshtykbaev, V. V. Starkov, N. A. Medetov… in Semiconductors (2014)

Article

Structure and luminescence of silicon irradiated by protons

The temperature dependence of photoluminescence (PL) in the range 8–300 K is studied for single crystalline silicon irradiated by protons at high temperatures. It is shown that the samples with p-type conductivit...

N. N. Gerasimenko, A. N. Mikhailov… in Inorganic Materials: Applied Research (2014)

Article

Growth of nanocrystalline silicon from a matrix of amorphous silicon monoxide

Changes in the structure and phase composition of silicon monoxide in the disproportionation reaction at high temperatures with the formation of a nanocrystalline silicon phase are studied. On itsseparation fr...

B. G. Gribov, K. V. Zinov’ev, O. N. Kalashnik, N. N. Gerasimenko… in Semiconductors (2013)

Article

Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example

Results of a comprehensive analysis of process variables of TiN/Ti diffuse barrier structures used in modern microelectronics are presented. To provide reliable spectral ellipsometry results, which is a common...

D. I. Smirnov, R. M. Giniyatyllin, I. Yu. Zyul’kov… in Technical Physics Letters (2013)

Article

Structure and phase composition of silicon monoxide

New methods for the synthesis of silicon monoxide are considered. The structure and phase composition of the compounds synthesized are studied by mass spectrometry, X-ray diffraction analysis, and IR spectrosc...

B. G. Gribov, K. V. Zinov’ev, O. N. Kalashnik, N. N. Gerasimenko… in Semiconductors (2012)

Article

Performance of the genetic algorithm in X-ray reflectometry data analysis

The effect of the width of the search range of solutions on genetic algorithm performance in the interpretation of X-ray reflectograms has been analyzed. The search algorithm has been optimized, based on the r...

D. A. Kartashov, N. N. Gerasimenko, N. A. Medetov… in Russian Microelectronics (2011)

Article

Specific features of relief formation on silicon etched by a focused ion beam

The effect of a focused ion beam on the state of a silicon crystal surface has been studied. Periodic ring-shaped ribs have been observed on the walls of an etched cylindrical hole. The formation of periodic s...

N. N. Gerasimenko, A. A. Chamov, N. A. Medetov, V. A. Khanin in Technical Physics Letters (2010)

Article

Relative x-ray reflectometry of discrete layered structures

The relative x-ray reflectometry (RXR) technique has been used for the first time for determining the parameters of a discrete layered structure. The scheme of x-ray optics used for these measurements on two w...

A. G. Tur’yanskiĭ, S. A. Aprelov, N. N. Gerasimenko… in Technical Physics Letters (2007)

Article

Properties of self-organized SiGe nanostructures formed by ion implantation

Properties of self-organized SiGe quantum dots formed for the first time by ion implantation of Ge ions into Si are studied using Auger electron spectroscopy, atomic-force microscopy, and scanning electron mic...

Yu. N. Parkhomenko, A. I. Belogorokhov, N. N. Gerasimenko, A. V. Irzhak… in Semiconductors (2004)

Chapter and Conference Paper

Quantum Dots in Si-Ge Structures Synthesized by Ge Ion Implantation Into Si Wafers

Quantum dots (nanosize structures with quantum properties) have been obtained by ion bean synthesis using Ge ion implantation into a silicon wafer. Atomic force and scanning electron microscopies and Auger ele...

Yu.N. Parkhomenko, N.N. Gerasimenko in Nanostructured Thin Films and Nanodispersi… (2004)

Chapter and Conference Paper

Radiation methods for creation of heterostructures on silicon

N. N. Gerasimenko in Defect Complexes in Semiconductor Structures (1983)

Article

Investigation of hydrogen capture in ion-bombarded silicon dioxide films by the atr method

N. N. Gerasimenko, T. I. Kovalevskaya, G. M. Tseitlin in Journal of Applied Spectroscopy (1978)