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Article
Open AccessStructural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization
The growth of the poly-Si films was studied by Transmission Electron Microscopy (TEM) after Ni Metal Induced Lateral Crystallization (Ni-MILC) of amorphous Si films at 413 °C. Significant differences in the mo...
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Article
Open AccessTransient Photoinduced Absorption in Ultrathin As-grown Nanocrystalline Silicon Films
We have studied ultrafast carrier dynamics in nanocrystalline silicon films with thickness of a few nanometers where boundary-related states and quantum confinement play an important role. Transient non-degene...
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Chapter and Conference Paper
Properties of β-FeSi2 Quantum Structures Grown on Silicon
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Article
Process Induced Extended Defects in SiC Grown via Sublimation
Three possible situations of extended defect formation during sublimation growth of SiC have been investigated: a-plane growth, occurrence and effect of irregular growth interfaces, and development of elongate...
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Chapter
Incommensurate — Commensurate Phase Transition of Cu2-×Te. (x < 0.05)
In the temperature range 25ºC to 600°C, Cu2-×Te (x<0.05) undergoes a sequence of phase transformations schematically shown in Fig. 1.1 The highest temperature phase (∊-phase) and the one stable at room tempera...
