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  1. No Access

    Article

    Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone

    Ultrashallow p +-n junctions formed in silicon (100) under nonequilibrium impurity diffusion conditions are analyzed by electron-beam diagnostics of the surface zone using a probe of low-to medium-energy electron...

    A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin in Semiconductors (1998)

  2. No Access

    Article

    Ultrashallow p +-n junctions in Si(111): Electron-beam diagnostics of the surface region

    Ultrashallow p +-n junctions fabricated in Si(111) are investigated by low-and intermediateenergy electron-beam probing of the surface region in order to determine how the crystallographic orientation of the sili...

    N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. A. Andronov… in Semiconductors (1999)

  3. No Access

    Article

    Electron-beam-induced conductivity in self-organized silicon quantum wells

    Electron-beam diagnostics are used to study self-organized quantum wells which form within ultrashallow silicon p +-n junctions under the conditions of nonequilibrium boron diffusion. The energy dependence and cu...

    A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin… in Semiconductors (1999)

  4. No Access

    Article

    Charge carrier interference in modulated quantum wires

    Quantized conductance as a function of the charge carrier energy in modulated quantum wires is investigated for the first time. The energy dependence of the coefficient of transit through a modulated quantum w...

    N. T. Bagraev, W. Gehlhoff, V. K. Ivanov, L. E. Klyachkin… in Semiconductors (2000)

  5. No Access

    Article

    Ballistic conductance of a quantum wire at finite temperatures

    The temperature-dependent ballistic conductance of a quantum wire is calculated without consideration of carrier scattering. The contribution to the conductance (G) from size-quantization subbands with E ...

    N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2000)

  6. No Access

    Article

    Self-ordered microcavities embedded in ultrashallow silicon p-n junctions

    Scanning tunneling spectroscopy was used to obtain topographic images of the (100) surface of ultrashallow diffusion profiles of boron in silicon. This method makes it possible to study the influence of fluctu...

    N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2000)

  7. No Access

    Article

    Charge carrier interference in one-dimensional semiconductor rings

    Interference of the ballistic charge carriers in one-dimensional (1D) rings formed by two quantum wires in the self-ordered silicon quantum wells was investigated for the first time. The charge carrier transmi...

    N. T. Bagraev, A. D. Buravlev, V. K. Ivanov, L. E. Klyachkin… in Semiconductors (2000)

  8. No Access

    Article

    Spontaneous spin polarization of electrons in quantum wires

    The quantum conductance staircase of the one-dimensional (1D) channel is analyzed for a weak filling of the lower 1D subbands, when the exchange electron-electron interaction of carriers dominates over their k...

    I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin in Semiconductors (2002)

  9. No Access

    Article

    Quantized conductance in silicon quantum wires

    The results of studying the quantum-mechanical staircase for the electron and hole conductance of one-dimensional channels obtained by the split-gate method inside self-assembled silicon quantum wells are repo...

    N. T. Bagraev, A. D. Buravlev, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2002)

  10. No Access

    Article

    Spin Polarization in Low-Density Quantum Wires

    We present the results of the theoretical analysis of quasi one-dimensional electron gas within the Hartree–Fock approximation. The ground state energy for full polarized and unpolarized states is calculated at T

    I. A. Shelykh, N. T. Bagraev, V. K. Ivanov, L. E. Klyachkin in Journal of Superconductivity (2003)

  11. No Access

    Article

    Spin depolarization in spontaneously polarized low-dimensional systems

    Conditions for the appearance of a spontaneous spin polarization in low-dimensional systems in zero magnetic field are analyzed for the case of low occupation of the lowest quantum-confinement subbands, when t...

    I. A. Shelykh, N. T. Bagraev, L. E. Klyachkin in Semiconductors (2003)

  12. No Access

    Article

    p +-Si-n-CdF2 heterojunctions

    Boron diffusion and the vapor-phase deposition of silicon layers are used to prepare ultrashallow p +-n junctions and p +-Si-n-CdF2 heterostructures on an n-CdF2 crystal surface. Forward portions of the I–V chara...

    N. T. Bagraev, L. E. Klyachkin, A. M. Malyarenko, A. I. Ryskin… in Semiconductors (2005)

  13. No Access

    Article

    Local tunneling spectroscopy of silicon nanostructures

    The recharging of many-hole and few-electron quantum dots under the conditions of the ballistic transport of single charge carriers inside self-assembled quantum well structures on a Si (100) surface are studi...

    N. T. Bagraev, A. D. Bouravlev, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2005)

  14. No Access

    Article

    Magnetism of III–V crystals doped with rare-earth elements

    The procedure of measuring static magnetic susceptibility is used for the study of local ordering in III–V crystals containing rare-earth dopants. The dependences of the static magnetic susceptibility on the t...

    N. T. Bagraev, V. V. Romanov in Semiconductors (2005)

  15. No Access

    Article

    Quantum Hall effect in (cadmium flouride)-based nanostructures

    Shubnikov-de Haas oscillations and a ladder of quantum steps in the Hall resistance were observed in a p-CdF2 quantum well confined by δ-like barriers for CdB x F2−x ...

    N. T. Bagraev, O. N. Gimbitskaya, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2009)

  16. No Access

    Article

    Spin transistor based on cadmium fluoride nanostructures

    A study of CdB x F2 − x /p-CdF2/CdB x F2 − x planar sandwich structures fabricated on n-CdF2 cr...

    N. T. Bagraev, O. N. Gimbitskaya, L. E. Klyachkin, A. M. Malyarenko… in Semiconductors (2009)

  17. No Access

    Article

    Superconducting properties of silicon nanostructures

    Superconducting properties of silicon sandwich nanostructures on the n-Si (100) surface, which represent the ultra-narrow p-type silicon quantum wells confined by heavily boron-doped δ barriers, manifest themselv...

    N. T. Bagraev, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko… in Semiconductors (2009)

  18. No Access

    Article

    Quantum supercurrent and Andreev reflection in silicon nanostructures

    The tunneling spectroscopy is used for studying the hole transport in a sandwich nanostructure of the superconductor-ultra-narrow-self-assembled-p-silicon-quantum-well (Si-QW)-superconductor type on the n-Si (100...

    N. T. Bagraev, L. E. Klyachkin, A. A. Koudryavtsev, A. M. Malyarenko… in Semiconductors (2009)

  19. No Access

    Article

    Quantum spin Hall effect in nanostructures based on cadmium fluoride

    Tunneling current-voltage (I-V) characteristics and temperature dependences of static magnetic susceptibility and specific heat of the CdB x F2 − x /p-CdF

    N. T. Bagraev, O. N. Guimbitskaya, L. E. Klyachkin, A. A. Koudryavtsev… in Semiconductors (2010)

  20. No Access

    Article

    Shubnikov-de-Haas and de-Haas-van-Alphen oscillations in silicon nanostructures

    The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by δ barriers he...

    N. T. Bagraev, E. S. Brilinskaya, D. S. Gets, L. E. Klyachkin… in Semiconductors (2011)

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