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  1. No Access

    Article

    Influence of the Network Geometry on Electron Transport in Nanoparticle Networks

    Computer simulations are applied to understand the influence of network geometry on the electron transport dynamics in random nanoparticle networks, and the predicted results are compared with those measured i...

    K. D. Benkstein, N. Kopidakis, J. van de Lagemaat… in MRS Online Proceedings Library (2003)

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    Article

    Photoconductivity of a-Si:H as a Function of Do**, Temperature and Photocarrier Generation Rates Between 1013 and 1028cm−3s−1

    The steady state photoconductivity σp of n-type, p-type and intrinsic a-Si:H has been studied up to photocarrier generation rates of G=5×1027cm−3s−1. In the 20ppm B2H6/SiH4 p-type sample photoconduction switches ...

    P. Stradins, H. Fritzsche, N. Kopidakis, P. Tzanetakis in MRS Online Proceedings Library (1996)

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    Article

    Comparison of Experiment and Theory of the Photoconductivity of a-Si:H up to a Generation Rate of 1028cm−3s−1

    We have studied the dependence of the photoconductivity σp on photocarrier generation rate G in intrinsic a-Si:H at 300K between G=1012cm−3s−1 and 1028cm−3s−1. Below a certain value Go, we find σo=AGγ with γ=0.9±...

    P. Stradins, H. Fritzsche, P. Tzanetakis, N. Kopidakis in MRS Online Proceedings Library (1996)

  4. No Access

    Article

    Light-Induced Degradation of a-Si:H - A Comparison of Short-Laser-Pulse and Steady Light Degradation

    An undoped and a compensated a-Si:H sample have been degraded by 17–34 ns laser pulses and by steady light (CW) at 78K and 300K. The light-induced defect concentration N is monitored by the increase in subgap ...

    P. Tzanetakis, N. Kopidakis, M. Androulidakp… in MRS Online Proceedings Library (1995)