5 Result(s)
within
Min-Jeong Shin
Physics
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Article
Behavior of GaN nanoneedles grown by using hydride vapor phase epitaxy for different growth times
Gallium nitride (GaN) nanoneedles were synthesized by using the hydride vapor phase epitaxy method at various growth temperatures and times under a HCl:NH3 flow ratio of 1:38. The morphology of GaN nanostructures...
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Article
Pole figure measurement of the initial growth of GaN nanoneedles on GaN/Si(111) by using hydride vapor phase epitaxy
We report on crystallographic analyses of one-dimensional GaN nanoneedles grown on a n-GaN epilayer by using hydride vapor phase epitaxy. The nanoneedles were grown with a HCl:NH3 gas flow ratio of 1:38 at 600 °C...
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Article
Characteristics of enhanced-mode AlGaN/GaN MIS HEMTs for millimeter wave applications
In this paper, an enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) was developed by using 4-inch GaN HEMT process. We designed and fabricated Emode HEMTs and characterized device perfo...
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Article
Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing
We fabricated a 0.18-μm gate-length AlGaN/GaN high electron mobility transistor (HEMT) on SiC substrate fabricated by using two-step gate recessing which was composed of inductively coupled plasma (ICP) dry etchi...
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Article
Effects of P3HT concentration on the electrical properties of the Au/PEDOT:PSS/P3HT/n-GaN hybrid junction structure
An inorganic-organic hybrid junction has been fabricated by spin coating the p-type poly(3- hexylthiophene-2,5-diyl)(P3HT) and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) on an n-type ...
