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Article
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a the...
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Article
Thermal Annealing of InGaN/GaN Strained-Layer Quantum Well
Quantum well (QW) material engineering has attracted a considerable amount of interest from many people because of its ability to produce a number of optoelectronic devices. QW composition intermixing is a the...
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Article
The Effect of Tensile Strain on AlGaAs/GaAsP Interdiffused Quantum Well Laser
In this paper, we study the interdiffusion of tensile strained GaAsyPi.y /A10 33Ga0 67As single QW structures with a well width of 60 Å. Different P concentrations in the as-grown well are chosen to obtain dif...
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Article
Theory of Critical Layer Thickness of Nonconstant Quantum-Well Width Produced by Interdiffusion and its Optoelectronics Consequence
In this paper, the concept of critical layer thickness is applied to the interdiffused quantum well (DFQW) structure. For the as-grown InGaAs/LnP lattice matched quantum well, the interdiffusion process will i...
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Article
Analysis of three types of Interdiffusion Process in Ingaas/Inp Quantum-Well and their Devices Implications
The optical properties of In0.53Ga0.47As/InP single quantum well (QW) (with an as-grown well width of 60Å structures) interdiffused with different cation and anion interdiffusion rates have been theoretically ana...
